Method and tool to reverse the charges in anti-reflection films used for solar cell applications
View Patent ↗A method is provided for making a solar cell. The method includes providing a stack including a substrate, a barrier layer disposed on the substrate, and an anti-reflective layer disposed on the barrier layer, where the anti-reflective layer has charge centers. The method also includes generating a corona with a charging tool and contacting the anti-reflective layer with the corona thereby injecting charge into at least some of the charge centers in the anti-reflective layer. Ultra-violet illumination and temperature-based annealing may be used to modify the charge of the anti-reflective layer.
1. A method for making a solar cell, the method comprising:
(a) providing a stack including a substrate, a barrier layer disposed on the substrate, and an anti-reflective layer disposed on the barrier layer, the anti-reflective layer having charge centers;
(b) generating a corona with a charging tool; and
(c) contacting the anti-reflective layer with the corona thereby injecting charge into at least some of the charge centers in the anti-reflective layer,
wherein the charge is uniformly distributed throughout the anti-reflective layer; and
wherein a thickness of the barrier layer is sufficient to prevent electron tunneling from the substrate to the anti-reflective layer without negating effects of the introduced charge in the antireflective layer.
2. The method of claim 1 , wherein step (a) comprises
(i) providing a silicon substrate;
(ii) forming a silicon dioxide barrier layer on the substrate; and
(iii) forming a silicon nitride anti-reflective layer on the barrier layer.
3. The method of claim 1 , wherein the substrate comprises a doped semiconductor material.
4. The method of claim 1 , wherein the barrier layer is of a thickness in a range of 15 nanometers to 50 nanometers.
5. The method of claim 1 , wherein the charging tool comprises a wire assembly configured to receive a voltage for generating the corona.
6. The method of claim 5 , wherein the wire assembly comprises at least one wire having a diameter in a range of 100 micrometers to 1000 micrometers.
7. The method of claim 1 , wherein the anti-reflective layer is of a thickness in a range of 10 nanometers to 500 nanometers.
8. The method of claim 1 , further comprising:
(d) exposing the anti-reflective layer to ultraviolet radiation.
9. The method of claim 8 , wherein the ultraviolet radiation has a wavelength of 300 nanometers or less.
10. The method of claim 1 , wherein the charge centers are amphoteric.
11. The method of claim 1 , wherein negative charge is injected into at least some of the charge centers in the anti-reflective layer.
12. The method of claim 1 , wherein positive charge is injected into at least some of the charge centers in the anti-reflective layer.
13. The method of claim 11 , wherein step (a) comprises
(i) providing a silicon substrate;
(ii) forming a silicon dioxide barrier layer on the substrate; and
(iii) forming a silicon nitride anti-reflective layer on the barrier layer.
14. The method of claim 11 , wherein the substrate comprises a doped silicon material.
15. The method of claim 11 , wherein the anti-reflective layer is of a thickness in a range of 10 nanometers to 500 nanometers, and the barrier layer is of a thickness in a range of 15 nanometers to 50 nanometers.
16. A method for making a thin film solar cell, the method comprising:
(a) providing a stack including a substrate, a barrier layer disposed on the substrate, and an anti-reflective layer disposed on the barrier layer, the anti-reflective layer having charge centers;
(b) generating a corona with a negative polarity charging tool; and
(c) contacting the anti-reflective layer with the corona thereby injecting negative charge into at least some of the charge centers in the anti-reflective layer,
wherein the charge is uniformly distributed throughout the anti-reflective layer, and
wherein a thickness of the barrier layer is sufficient to prevent electron tunneling from the substrate to the anti-reflective layer without negating effects of the introduced charge in the antireflective layer.
17. A method for making a thin film solar cell, the method comprising:
(a) providing a stack including a substrate, a barrier layer disposed on the substrate, and an anti-reflective layer disposed on the barrier layer, the anti-reflective layer having charge centers;
(b) generating a corona with a bipolar charging tool; and
(c) contacting the anti-reflective layer with the corona thereby injecting positive or negative charge into at least some of the charge centers in the anti-reflective layer,
wherein the charge is uniformly distributed throughout the anti-reflective layer, and
wherein a thickness of the barrier layer is sufficient to prevent electron tunneling from the substrate to the anti-reflective layer without negating effects of the introduced charge in the antireflective layer.
18. The method of claim 17 , wherein step (a) comprises
(i) providing a silicon substrate;
(ii) forming a silicon dioxide barrier layer on the substrate; and
(iii) forming a silicon nitride anti-reflective layer on the barrier layer.
19. The method of claim 17 , wherein the anti-reflective layer is of a thickness in a range of 10 nanometers to 500 nanometers, and the barrier layer is of a thickness in a range of 15 nanometers to 50 nanometers.
20. The method of claim 17 , further comprising:
(d) exposing the anti-reflective layer to ultraviolet radiation, wherein the ultraviolet radiation has a wavelength of 300 nanometers or less.