Method of providing an operating voltage in a memory device and a memory controller for the memory device

1. A method of reading a nonvolatile memory device, comprising:

applying a first read voltage to a selected word line connected to memory cells of the nonvolatile memory device;

applying a first pass voltage to a first unselected word line, the first unselected word line being adjacent to the selected word line while the first read voltage is applied to the selected word line;

applying a second pass voltage to at least one of remaining unselected word lines other than the first unselected word line while the first read voltage is applied to the selected word line, the second pass voltage being less than the first pass voltage;

applying a second read voltage to the selected word line connected to the memory cells of the nonvolatile memory device, the second read voltage being less than the first read voltage;

applying a third pass voltage to the first unselected word line while the second read voltage is applied to the selected word line, the third pass voltage being different from the first pass voltage; and

applying a fourth pass voltage to the at least one of the remaining unselected word lines other than the first unselected word line while the second read voltage is applied to the selected word line, the fourth pass voltage being substantially the same as the second pass voltage,

wherein the first unselected word line and a string select line are in the same side relative to the selected word line.

2. The method of claim 1 , wherein a first data is read from the memory cells during applying the first read voltage to the selected word line, and a second data is read from the memory cells during applying the second read voltage to the selected word line, data bits of a first page are generated from the first data and the second data.

3. The method of claim 1 , wherein the applying the first read voltage to the selected word line, the applying the first pass voltage to the first unselected word line and the applying the second pass voltage to at least one of the remaining unselected word lines are performed concurrently.

4. The method of claim 1 , wherein the applying the second read voltage to the selected word line, the applying the third pass voltage to the first unselected word line and the applying the fourth pass voltage to the at least one of the remaining unselected word lines are performed concurrently.

5. The method of claim 1 , wherein the applying the second read voltage to the selected word line is performed after the applying the first read voltage to the selected word line is performed.

6. The method of claim 1 , wherein the first pass voltage is determined based on the first read voltage, and the third pass voltage is determined based on the second read voltage.

7. The method of claim 1 , wherein the second pass voltage is applied to all of the remaining unselected word lines that are not adjacent to the selected word line, and

the fourth pass voltage is applied to all of the remaining unselected word lines that are not adjacent to the selected word line.

8. The method of claim 1 , wherein a difference between the first read voltage and the second read voltage is greater than a difference between the first pass voltage and the third pass voltage.

9. The method of claim 1 , wherein a difference between the first read voltage and the second read voltage is less than a difference between the first pass voltage and the third pass voltage.

10. The method of claim 1 , wherein the third pass voltage is less than the first pass voltage.

11. A method of reading a nonvolatile memory device, comprising:

applying a first read voltage to a selected word line connected to memory cells of the nonvolatile memory device;

applying a first pass voltage to a first unselected word line while the first read voltage is applied to the selected word line, the first unselected word line being adjacent to the selected word line;

applying a second pass voltage to a second unselected word line while the first read voltage is applied to the selected word line, the second unselected word line being adjacent to the selected word line;

applying a third pass voltage to remaining unselected word lines other than the first unselected word line and the second unselected word line while the first read voltage is applied to the selected word line, the third pass voltage being less than the first pass voltage;

applying a second read voltage to the selected word line connected to the memory cells of the nonvolatile memory device, the second read voltage being less than the first read voltage;

applying a fourth pass voltage to the first unselected word line while the second read voltage is applied to the selected word line, the fourth pass voltage being substantially the same as the first pass voltage;

applying a fifth pass voltage to the second unselected word line while the second read voltage is applied to the selected word line, the fifth pass voltage being less than the second pass voltage; and

applying a sixth pass voltage to the remaining unselected word lines other than the first unselected word line and the second unselected word line while the second read voltage is applied to the selected word line, the sixth pass voltage being substantially the same as the third pass voltage.

12. The method of claim 11 , wherein the first pass voltage is substantially the same as the second pass voltage.

13. The method of claim 11 , wherein the fifth pass voltage is less than the sixth pass voltage.

14. The method of claim 11 , wherein the first unselected word line and a ground select line are in the same side relative to the selected word line, and

the second unselected word line and a string select line are in the same side relative to the selected word line.

15. The method of claim 11 , wherein a difference between the first read voltage and the second read voltage is greater than a difference between the second pass voltage and the fifth pass voltage.

16. The method of claim 11 , wherein a difference between the first read voltage and the second read voltage is less than a difference between the second pass voltage and the fifth pass voltage.

17. A method of reading a nonvolatile memory device, comprising:

applying a first read voltage to a selected word line connected to memory cells of the nonvolatile memory device;

applying a first pass voltage to a first unselected word line while the first read voltage is applied to the selected word line, the first unselected word line being adjacent to the selected word line;

applying a second pass voltage to at least one of remaining unselected word lines other than the first unselected word line while the first read voltage is applied to the selected word line, the second pass voltage being less than the first pass voltage;

applying a second read voltage to the selected word line connected to the memory cells of the nonvolatile memory device, the second read voltage being less than the first read voltage;

applying a third pass voltage to the first unselected word line while the second read voltage is applied to the selected word line, the third pass voltage being different from the first pass voltage; and

applying a fourth pass voltage to the at least one of the remaining unselected word lines other than the first unselected word line while the second read voltage is applied to the selected word line.

18. The method of claim 17 , wherein the fourth pass voltage is substantially the same as the second pass voltage.

19. The method of claim 17 , wherein the third pass voltage is less than the first pass voltage.

20. The method of claim 17 , wherein the second pass voltage is applied to all of the remaining unselected word lines that are not adjacent to the selected word line, and the fourth pass voltage is applied to all of the remaining unselected word lines that are not adjacent to the selected word line.