Method of forming strain-relaxed buffer layers
Implementations described herein generally relate to methods for relaxing strain in thin semiconductor films grown on another semiconductor substrate that has a different lattice constant. Strain relaxation typically involves forming a strain relaxed buffer layer on the semiconductor substrate for further growth of another semiconductor material on top. Whereas conventionally formed buffer layers are often thick, rough and/or defective, the strain relaxed buffer layers formed using the implementations described herein demonstrate improved surface morphology with minimal defects.
1. A method of heteroepitaxial deposition of a strain relaxed buffer (SRB) layer on a substrate, comprising:
exposing a substrate to an etchant species, wherein the etchant species is generated from a fluorine containing precursor and a hydrogen containing precursor in a remote plasma source;
epitaxially depositing a silicon-germanium buffer layer on the substrate, comprising flowing a silicon precursor gas, a germanium source gas, and a hydrogen pas to deposit the silicon-germanium buffer layer;
epitaxially depositing a silicon containing capping layer on the silicon-germanium buffer layer, comprising:
stopping the flow of the germanium source gas while continuing to flow the silicon precursor gas and the hydrogen gas to deposit the silicon containing capping layer on the silicon-germanium buffer layer; and
annealing the silicon-germanium buffer layer and the silicon containing capping layer to relax the silicon-germanium buffer layer, wherein annealing the silicon-germanium buffer layer comprises:
stopping the flow of the silicon precursor gas while continuing to flow the hydrogen gas; and
exposing the substrate to an annealing temperature from about 200 degrees Celsius to about 850 degrees Celsius in the presence of the hydrogen gas.
2. The method of claim 1 , further comprising:
epitaxially depositing a second buffer layer on the silicon containing capping layer; and
epitaxially depositing a second silicon containing capping layer on the second buffer layer, wherein epitaxially depositing a second buffer layer and epitaxially depositing a second silicon containing capping layer occur prior to annealing the silicon-germanium buffer layer and the silicon containing capping layer.
3. The method of claim 1 , further comprising repeating the epitaxially depositing a silicon-germanium buffer layer on a substrate and the epitaxially depositing a silicon containing capping layer on the silicon-germanium buffer layer until a desired thickness is achieved.
4. The method of claim 1 , further comprising depositing active material on the silicon containing capping layer.
5. The method of claim 1 , wherein the substrate is a material selected from the group consisting of: sapphire (Al 2 O 3 ), doped silicon (Si), undoped silicon, silicon carbide (SiC), spinel, zinc oxide, gallium-arsenide (GaAs), lithium gallate, indium phosphide (InP), single-crystal GaN, aluminum nitride (AlN), GdScO 3 (GSO), MoSe 2 , Ge 2 Sb 2 Te 5 (GST) and combinations thereof.
6. The method of claim 1 , wherein the epitaxially depositing a silicon-germanium buffer layer and annealing the silicon-germanium buffer layer and the silicon containing capping layer to relax the silicon-germanium buffer layer occur in the same processing chamber.
7. A method of heteroepitaxial deposition of a strain relaxed buffer (SRB) layer on a substrate, comprising:
exposing a silicon substrate to an etchant species, wherein the etchant species is generated from a fluorine containing precursor and a hydrogen containing precursor in a remote plasma source;
epitaxially depositing a silicon-germanium (Si 1−x Ge x ) buffer layer on the silicon substrate, comprising flowing a silicon precursor gas, a germanium source gas, and a hydrogen carrier gas to deposit the silicon-germanium buffer layer, wherein 0<x<1;
epitaxially depositing a silicon containing capping layer on the silicon-germanium buffer layer, comprising:
stopping the flow of the germanium source gas while continuing to flow the silicon precursor gas and the hydrogen carrier gas to deposit the silicon containing capping layer on the silicon-germanium buffer layer;
annealing the silicon-germanium buffer layer and the silicon containing capping layer to relax the silicon-germanium buffer layer, wherein annealing the silicon-germanium buffer layer comprises:
stopping the flow of the silicon precursor gas while continuing to flow the hydrogen carrier gas; and
exposing the substrate to an annealing temperature from about 200 degrees Celsius to about 850 degrees Celsius in the presence of the hydrogen carrier gas; and
depositing a germanium layer on the silicon containing capping layer.
8. The method of claim 7 , further comprising:
epitaxially depositing a second silicon-germanium buffer layer on the silicon containing capping layer; and
epitaxially depositing a second silicon containing capping layer on the second silicon-germanium buffer layer, wherein the epitaxially depositing a second silicon-germanium buffer layer and the epitaxially depositing a second silicon containing capping layer occur prior to annealing the silicon-germanium buffer layer and the silicon containing capping layer.
9. The method of claim 7 , further comprising repeating the epitaxially depositing a silicon-germanium buffer layer on the silicon substrate and the epitaxially depositing a silicon containing capping layer on the silicon-germanium buffer layer until a desired thickness is achieved.
10. The method of claim 7 , wherein the epitaxially depositing a silicon-germanium buffer layer and the annealing the silicon-germanium buffer layer and the silicon containing capping layer to relax the silicon-germanium buffer layer occur in the same processing chamber.
11. A method of forming a heteroepitaxial film on a substrate in an integrated processing system, comprising:
exposing a substrate to an etchant species in a pre-clean chamber of an integrated processing system, wherein the etchant species is generated from a fluorine containing precursor and a hydrogen containing precursor in a remote plasma source;
transferring the substrate to a first processing chamber of the integrated processing system;
epitaxially depositing a silicon-germanium buffer layer over the substrate in the first processing chamber of the integrated processing system, comprising flowing a silicon precursor gas, a germanium source gas, and a hydrogen carrier gas to deposit the silicon-germanium buffer layer;
epitaxially depositing a silicon containing capping layer over the silicon-germanium buffer layer in the first processing chamber of the integrated processing system, comprising:
stopping the flow of the germanium source gas while continuing to flow the silicon precursor gas and the hydrogen carrier gas to deposit the silicon containing capping layer on the silicon-germanium buffer layer; and
annealing the silicon-germanium buffer layer and the silicon containing capping layer in the first processing chamber, wherein annealing the silicon-germanium buffer layer comprises:
stopping the flow of the silicon precursor gas while continuing to flow the hydrogen carrier gas; and
exposing the substrate to an annealing temperature from about 200 degrees Celsius to about 850 degrees Celsius in the presence of the hydrogen carrier pas.
12. The method of claim 11 , further comprising:
removing the substrate from the first processing chamber;
transferring the substrate to a second processing chamber of the integrated processing system; and
depositing an active material layer over the silicon-germanium buffer layer.