Compact particle accelerator
View Patent ↗A compact particle accelerator having an input portion configured to receive power to produce particles for acceleration, where the input portion includes a switch, is provided. In a general embodiment, a vacuum tube receives particles produced from the input portion at a first end, and a plurality of wafer stacks are positioned serially along the vacuum tube. Each of the plurality of wafer stacks include a dielectric and metal-oxide pair, wherein each of the plurality of wafer stacks further accelerate the particles in the vacuum tube. A beam shaper coupled to a second end of the vacuum tube shapes the particles accelerated by the plurality of wafer stacks into a beam and an output portion outputs the beam.
1. A compact particle accelerator comprising:
an input portion configured to receive power to produce particles for acceleration, the input portion comprising a first switch;
a vacuum tube configured to receive particles produced from the input portion at a first end;
a plurality of wafers operatively coupled to the input portion and positioned serially along the vacuum tube, each of the plurality of wafers comprising a dielectric and a varistor, wherein each of the plurality of wafers are configured to further accelerate the particles in the vacuum tube;
a beam shaper, operatively coupled to a second end of the vacuum tube, wherein the beam shaper is configured to shape the particles accelerated by the plurality of wafers into a beam; and
an output portion for outputting the beam.
2. The compact particle accelerator of claim 1 , wherein the switch comprises one of a silicon-controlled rectifier or a spark-gap.
3. The compact particle accelerator of claim 1 , wherein the varistor comprises one of zinc oxide or silicon carbide.
4. The compact particle accelerator of claim 1 , wherein the wafers are a concentric-ring shape.
5. The compact particle accelerator of claim 1 , further comprising one of resistors or inductors coupled to each of the wafers to provide a bias voltage or the path to ground.
6. The compact particle accelerator of claim 1 , wherein each of the wafers further comprises a metal film separating the dielectric and the varistor.
7. The compact particle accelerator of claim 1 , wherein each of the wafers have a thickness between 2 μm-3 mm.
8. A compact particle accelerator structure comprising:
a plurality of wafers integrated serially along a vacuum tube configured to carry accelerated particles, each of the plurality of wafers comprising a dielectric and a varistor, wherein each of the plurality of wafers are configured to further accelerate the particles in the vacuum tube;
a beam shaper, operatively coupled to an end of the vacuum tube, wherein the beam shaper is configured to shape the particles accelerated by the plurality of wafers into a beam; and
an output portion for outputting the beam.
9. The compact particle accelerator of claim 8 , further comprising a first switch equipped with an input to accelerate the particles wherein the first switch comprises one of a silicon-controlled rectifier or a spark-gap.
10. The compact particle accelerator of claim 8 , wherein the varistor comprises a metal-oxide or a silicon carbide.
11. The compact particle accelerator of claim 8 , wherein the wafers are a concentric-ring shape.
12. The compact particle accelerator of claim 8 , further comprising one of resistors or inductors coupled to each of the wafers to provide a bias voltage or the path to ground.
13. The compact particle accelerator of claim 8 , wherein each of the wafers further comprises a metal film separating the dielectric and the varistor.
14. The compact particle accelerator of claim 8 , wherein each of the wafers have a thickness between 2 μm-3 mm.
15. A method of operating a compact particle accelerator, the method comprising:
receiving power at an input portion of the accelerator;
applying the power to charge a plurality of wafers operatively coupled to the input portion and positioned serially along a cavity, each of the plurality of wafers comprising a dielectric and a varistor; and
activating a first switch equipped with the input portion to accelerate particles through the cavity via the plurality of charged wafers;
outputting the accelerated particles through an output portion of the compact particle accelerator.
16. The method of claim 15 , wherein the first switch comprises one of a silicon-controlled rectifier or a spark-gap.
17. The method of claim 15 , wherein the varistor comprises one of zinc oxide or silicon carbide.
18. The method of claim 15 , wherein the wafers are a concentric-ring shape.
19. The method of claim 15 , wherein each of the wafers further comprises a metal film separating the dielectric and the varistor.
20. The method of claim 15 , wherein each of the wafers have a thickness between 2 μm-3 mm.