Image sensor with 3D stack structure
Disclosed is an image sensor with a 3D stack structure, in which pixels of a top plate are realized as image pixels and pixels of a bottom plate are realized as pixels for realizing a phase difference AF, so that the phase difference AF is realized without loss of resolution. In the image sensor with a 3D stack structure, a problem of the reduction of resolution, which is a disadvantage of an existing imaging surface phase difference AF device, is solved, so that a fast phase difference AF is realized while maintaining high resolution without a separate phase difference AF module.
1. An image sensor with a 3D stack structure, comprising:
a first substrate including a first photodiode; and
a second substrate including a second photodiode and stacked at an upper portion of the first substrate,
wherein a part of light incident into the first photodiode is blocked to realize a phase difference AF function.
2. The image sensor with a 3D stack structure according to claim 1 , wherein a size of the first photodiode is smaller than a size of the second photodiode.
3. The image sensor with a 3D stack structure according to claim 1 , wherein a metal interconnection is formed at an upper portion of the first photodiode such that light is prevented from being incident into a part of the first photodiode.
4. The image sensor with a 3D stack structure according to claim 1 , wherein a blocking layer is formed on a bonding surface between the first substrate and the second substrate such that light is prevented from being incident into a part of the first photodiode.
5. The image sensor with a 3D stack structure according to claim 4 , wherein the blocking layer includes a black material.
6. The image sensor with a 3D stack structure according to claim 1 , wherein a light waveguide is formed at an upper portion of a part at which light is incident into the first photodiode.
7. The image sensor with a 3D stack structure according to claim 4 , wherein a light waveguide is formed at an upper portion of a part at which light is incident into the first photodiode.
8. The image sensor with a 3D stack structure according to claim 1 , wherein a Talbot effect induction filter is formed at an upper portion of the first photodiode.
9. The image sensor with a 3D stack structure according to claim 1 , wherein distance measurement between objects or three dimensional image capturing is possible.
10. The image sensor with a 3D stack structure according to claim 2 , wherein a blocking layer is formed on a bonding surface between the first substrate and the second substrate such that light is prevented from being incident into a part of the first photodiode.
11. The image sensor with a 3D stack structure according to claim 10 , wherein the blocking layer includes a black material.
12. The image sensor with a 3D stack structure according to claim 10 , wherein a light waveguide is formed at an upper portion of a part at which light is incident into the first photodiode.
13. The image sensor with a 3D stack structure according to claim 2 , wherein a light waveguide is formed at an upper portion of a part at which light is incident into the first photodiode.