Semiconductor package and method for manufacturing the same
A semiconductor package includes an interposer, first and second semiconductor chips horizontally arranged over a first surface of the interposer, the second semiconductor chip being adjacent to the first semiconductor chip, and a thermal expansion reinforcing pattern disposed over a second surface of the interposer.
1. A semiconductor package comprising:
an interposer body having a first surface and a second surface opposite to the first surface;
a passivation layer disposed on the first surface of the interposer body;
a thermal expansion reinforcing pattern disposed on the second surface of the interposer body;
a plurality of through-silicon vias (TSVs) penetrating the interposer body and the thermal expansion reinforcing pattern using a single layer so that one part of height of the TSVs is surrounded by the interposer body and the other part of the height of the TSVs is surrounded by the thermal expansion reinforcing pattern;
one or more semiconductor chips arranged over the passivation layer;
a plurality of coupling electrodes disposed on each of surfaces of the semiconductor chips to be electrically coupled to the TSVs; and
an insulating layer filling each of gaps between adjacent coupling electrodes.
2. The semiconductor package of claim 1 , wherein the thermal expansion reinforcing pattern is disposed over the entire second surface of the interposer body.
3. The semiconductor package of claim 1 , wherein the one or more semiconductor chips comprise first and second semiconductor chips disposed over the passivation layer, the second semiconductor chip being horizontally spaced apart from the first semiconductor chip over the passivation layer.