Method of operating a nonvolatile memory device having read disturbed page

1. A method of operating a nonvolatile memory device having a memory cell array of nonvolatile memory cells configured to operate as multi-level memory cells (MLC) and arranged in a memory block including a plurality of pages respectively coupled to a plurality of word lines extending across the memory cell array, the method comprising:

programming N-bit data to MLC of at least a first page among the plurality of pages using a N-bit mode, wherein “N” is a natural number greater than 1 and the plurality of pages includes an un-programmed page;

checking whether a threshold voltage distribution shift exists for the un-programmed page; and

upon determining that the threshold voltage distribution shift exits, programming M-bit data to the MLC of the un-programmed page using a M-bit mode, where “M” is a natural number less than N.

2. The method of claim 1 , wherein checking whether the threshold voltage distribution shift exists for the un-programmed page comprises:

counting a number of off-cells having threshold voltages higher than a shift check voltage among MLC of the un-programmed page by applying the shift check voltage to one of the plurality of word lines corresponding to the un-programmed page.

3. The method of claim 2 , wherein the counting of the number of off-cells is performed according to a period.

4. The method of claim 3 , wherein the period is defined by a fixed number of read operations directed to the MLC of the at least first page.

5. The method of claim 3 , wherein the period is defined by a randomly selected number of read operations directed to the MLC of the at least first page.

6. The method of claim 5 , wherein an average of an increasing number of the randomly selected numbers converges towards a predetermined average.

7. The method of claim 3 , wherein the period is defined by a gradually decreasing number of read operations following the programming of the at least first page using the N-bit mode.

8. The method of claim 1 , wherein the checking of whether the threshold voltage distribution shift exists for the un-programmed page is performed in response to receiving a command indicating that the un-programmed page is to be programmed, and before the un-programmed page is programmed.

9. The method of claim 2 , wherein the shift check voltage is lower than a read voltage used to discriminate between an erased state and a lowest program state among a plurality of program states used to program the MLC.

10. The method of claim 2 , wherein the shift check voltage is lower than a verify voltage identifying a lower boundary of a threshold voltage distribution associated with a lowest program state among a plurality of program states used to program the MLC.

11. The method of claim 2 , further comprising:

comparing the counted number of off-cells to a limit; and

determining that the threshold voltage distribution shift exists when the number of the counted off-cells is greater than or equal to the limit.

12. A method of operating a nonvolatile memory device having a memory cell array of nonvolatile memory cells configured to operate as multi-level memory cells (MLC) and arranged in a memory block including a plurality of pages respectively coupled to a plurality of word lines extending across the memory cell array, the method comprising:

programming N-bit data to MLC of a first page among the plurality of pages using a N-bit programming mode, wherein “N” is a natural number greater than 1 and the plurality of pages includes an un-programmed page;

after programming the N-bit data to the MLC of the first page, counting a number of read operations directed to the MLC of the first page, and comparing the number of counted read operations to a limit; and

upon determining that the number of counted read operations exceeds the limit, programming M-bit data to MLC of the un-programmed page using a M-bit programming mode, where “M” is a natural number less than N.

13. The method of claim 12 , wherein the N-bit programming mode uses first verify voltages defined by a first voltage difference, and the M-bit programming mode uses second verify voltages defined by a second voltage difference less than the first voltage difference.

14. The method of claim 12 , wherein the N-bit programming mode uses a first incremental step pulse voltage that increases by a first step voltage, and the M-bit programming mode uses a second incremental step pulse voltage that increases by a second step voltage less than the first step voltage.

15. A method of operating system including a memory controller controlling the operation of a nonvolatile memory device, wherein the nonvolatile memory device includes a memory cell array of nonvolatile memory cells configured to operate as multi-level memory cells (MLC) and arranged in a memory block including a plurality of pages respectively coupled to a plurality of word lines extending across the memory cell array, the method comprising:

programming pages among of the plurality of pages using a N-bit programming mode until a threshold voltage distribution shift for an un-programmed page among the plurality of pages is determined, and thereafter programming the un-programmed page using a M-bit programming mode, where “M” and “N” are natural numbers and M is less than N.

16. The method of claim 15 , wherein the threshold voltage distribution shift is determined by counting a number of off-cells having threshold voltages higher than a shift check voltage among MLC of the un-programmed page by applying the shift check voltage to one of the plurality of word lines corresponding to the un-programmed page.

17. The method of claim 15 , wherein the threshold voltage distribution shift is determined upon receiving a command in the nonvolatile memory device from the memory controller indicating that the un-programmed page is to be programmed.