Ion implantation apparatus and ion implantation method

1. An ion implantation apparatus comprising:

an implantation processing chamber for implanting ions into a workpiece;

a high voltage unit comprising an ion source unit for generating the ions, and a beam transport unit provided between the ion source unit and the implantation processing chamber; and

a high-voltage power supply system configured to apply a potential to the high voltage unit under any one of a plurality of energy settings, wherein

the high-voltage power supply system comprises a plurality of current paths formed such that a beam current flowing into the workpiece is returned to the ion source unit, and each of the plurality of energy settings is associated with a corresponding one of the plurality of current paths.

2. The ion implantation apparatus according to claim 1 , wherein

the plurality of energy settings comprises a first energy setting suitable for transport of a low energy ion beam, and a second energy setting suitable for transport of a high energy ion beam, and

the plurality of current paths comprises a first current path formed such that a beam current flowing from the low energy ion beam to the workpiece is returned to the ion source unit.

3. The ion implantation apparatus according to claim 2 , wherein

the plurality of current paths comprises a second current path formed such that a beam current flowing from the high energy ion beam to the workpiece is returned to the ion source unit.

4. The ion implantation apparatus according to claim 2 , wherein

the first current path connects a site having a potential of the workpiece to a reference potential of the ion source unit, such that the potential of the workpiece is used as the reference potential of the ion source unit.

5. The ion implantation apparatus according to claim 2 , wherein

the first current path comprises a first power supply which applies a positive potential to the ion source unit, a positive terminal of the first power supply being connected to the ion source unit, and

the first current path comprises a first switch for connecting a negative terminal of the first power supply to a site having a potential of the workpiece so as to form the first current path under the first energy setting.

6. The ion implantation apparatus according to claim 5 , wherein

the first switch connects the negative terminal of the first power supply to the beam transport unit under the second energy setting, and

a second current path of the high-voltage power supply system is formed so as to pass through the beam transport unit and the first switch.

7. The ion implantation apparatus according to claim 6 , wherein

the second current path comprises a second power supply which applies a positive potential or a negative potential, relative to a reference potential of the workpiece, to the beam transport unit, and a second switch which operates in synchronization with the first switch, and

the second switch connects the second power supply to the beam transport unit so as to apply the positive potential to the beam transport unit under the second energy setting.

8. The ion implantation apparatus according to claim 7 , wherein

the second switch connects the second power supply to the beam transport unit so as to apply the negative potential to the beam transport unit under the first energy setting.

9. The ion implantation apparatus according to claim 2 , wherein

the low energy ion beam is a low energy/high current beam, and the high energy ion beam is a high energy/low current beam.

10. The ion implantation apparatus according to claim 2 , wherein

the first energy setting is determined such that a first source potential is applied to the ion source unit and a first beam transport potential is applied to the beam transport unit,

the first source potential is a positive potential relative to a reference potential of the workpiece, and

the first beam transport potential is a negative potential relative to the reference potential of the workpiece.

11. The ion implantation apparatus according to claim 2 , wherein

the second energy setting is determined such that a second source potential is applied to the ion source unit and a second beam transport potential is applied to the beam transport unit,

the second source potential is a positive potential relative to a potential of the beam transport unit, and

the second beam transport potential is a positive potential relative to a reference potential of the workpiece.

12. The ion implantation apparatus according to claim 2 , wherein

the first current path comprises:

a second power supply which applies a positive potential or a negative potential, relative to a reference potential of the workpiece, to the beam transport unit; and

a resistor which is provided such that a beam current flowing from the low energy ion beam to the workpiece is returned to the ion source unit through the second power supply.

13. An ion implantation method comprising:

selecting one of a plurality of energy settings;

applying a potential to a high voltage unit of an ion implantation apparatus, based on a selected energy setting; and

implanting ions into a workpiece under the selected energy setting, wherein

the ion implantation apparatus comprises a plurality of current paths formed such that a beam current flowing into the workpiece is returned to an ion source unit, and each of the plurality of energy settings is associated with a corresponding one of the plurality of current paths.