Substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientation
View Patent ↗A method for fabricating substrate of a semiconductor device is disclosed. The method includes the steps of: providing a first silicon layer; forming a dielectric layer on the first silicon layer; bonding a second silicon layer to the dielectric layer; removing part of the second silicon layer and part of the dielectric layer to define a first region and a second region on the first silicon layer, wherein the remaining of the second silicon layer and the dielectric layer are on the second region; and forming an epitaxial layer on the first region of the first silicon layer, wherein the epitaxial layer and the second silicon layer comprise same crystalline orientation.
1. A substrate of semiconductor device, comprising:
a first silicon layer, wherein the first silicon layer comprises a first region and a second region;
an epitaxial layer on the first region;
a dielectric layer on the second region; and
a second silicon layer on the dielectric layer, wherein the second silicon layer and the epitaxial layer comprise a same crystalline orientation, and the epitaxial layer and the second silicon layer comprise different channel directions.
2. The substrate of semiconductor device of claim 1 , wherein the dielectric layer comprises silicon dioxide, aluminum oxide, or silicon nitride.
3. The substrate of semiconductor device of claim 1 , wherein the epitaxial layer comprises silicon carbide or silicon germanium.
4. The substrate of semiconductor device of claim 1 , wherein the epitaxial layer, the first silicon layer, and the second silicon layer comprise the same crystalline orientation.
5. The substrate of semiconductor device of claim 1 , wherein the epitaxial layer and the first silicon layer comprise a same channel direction.
6. A substrate of semiconductor device, comprising:
a first silicon layer, wherein the first silicon layer comprises a first region and a second region;
an epitaxial layer on the first region;
a dielectric layer on the second region, wherein a bottom surface of the epitaxial layer is even with a bottom surface of the dielectric layer; and
a second silicon layer on the dielectric layer, wherein the second silicon layer and the epitaxial layer comprise a same crystalline orientation, and the epitaxial layer and the second silicon layer comprise different channel directions.