Charged particle beam apparatus
View Patent ↗A charged particle beam apparatus includes an electron beam irradiation unit that irradiates a sample with electron beams along a first irradiation axis. A rotation stage holds the sample and has a rotation axis in a direction perpendicular to the first irradiation axis. An ion beam irradiation unit irradiates the sample with ion beams along a second irradiation axis that is substantially parallel to the rotation axis to process the sample into a needle shape. A detection unit detects at least one of charged particles and X rays generated via the sample by the irradiation with the ion beams or the electron beams, and a gaseous ion beam irradiation unit irradiates the sample with gaseous ion beams. A control unit controls the apparatus to incrementally rotate the rotation stage repeatedly by a predetermined angle to rotate the rotation stage by 360° in conjunction with irradiating the entire surface of the needle-shaped sample in a circumferential direction with the gaseous ion beams to remove ions implanted during processing the sample by the ion beams.
1. A charged particle beam apparatus comprising:
an electron beam irradiation unit configured to irradiate a sample with electron beams along a first irradiation axis;
a rotation stage, which is configured to hold the sample, and which has a rotation axis in a direction perpendicular to the first irradiation axis;
an ion beam irradiation unit configured to irradiate the sample with ion beams along a second irradiation axis that is substantially parallel to the rotation axis so as to process the sample into a needle shape;
a detection unit configured to detect at least one of charged particles and X rays generated via the needle-shaped sample by the irradiation with the ion beams or the electron beams;
a gaseous ion beam irradiation unit configured to irradiate the needle-shaped sample with gaseous ion beams; and
a control unit configured to control the charged particle beam apparatus to perform:
a rotation operation in which the rotation stage is rotated by a predetermined angle repeatedly so as to rotate the sample stage by 360°; and
an irradiation operation in which the gaseous ion beam irradiation unit irradiates an entire surface of the needle-shaped sample in a circumferential direction with the gaseous ion beams.
2. The charged particle beam apparatus according to claim 1 , wherein the control unit is configured to control the charged beam apparatus to alternatively perform the rotation operation and the irradiation operation.
3. The charged particle beam apparatus according to claim 1 , wherein the detection unit is configured to detect at least one of secondary electrons, secondary ions, backscattered electrons and transmitted electrons as the charged particles, the secondary electrons, secondary ions, backscattered electrons and transmitted electrons being generated from the sample, and the transmitted electrons being transmitted through the sample.
4. The charged particle beam apparatus according to claim 1 , wherein the sample is composed of a semiconductor material.
5. The charged particle beam apparatus according to claim 4 ,
wherein a liquid gallium ion source is used as an ion source of the ion beam irradiation unit, and
wherein the semiconductor material contains Si.
6. The charged particle beam apparatus according to claim 1 , wherein the ion beam irradiation unit processes a tip end portion of the sample into a needle shape.
7. The charged particle beam apparatus according to claim 1 , wherein the control unit is configured to control the charged particle beam apparatus to process the sample into a needle shape suitable for use in atom probe analysis.
8. The charged particle beam apparatus according to claim 1 , wherein the control unit is configured to control the charged beam apparatus to perform an electron beam irradiation operation in which the electron beam irradiation unit irradiates the needle-shaped sample with the electron beams.
9. A charged particle beam apparatus comprising:
a rotation stage rotatable about a rotation axis and configured to hold a sample;
an ion beam irradiation unit configured to irradiate the sample with ion beams directed along an irradiation axis that is substantially parallel to the rotation axis to process a tip end portion of the sample into a needle shape while, at the same time, implanting ions into the surface of the sample;
a gaseous ion beam irradiation unit configured to irradiate the tip end portion of the sample with gaseous ion beams to remove implanted ions from the sample surface; and
a control unit configured to control the charged particle beam apparatus to perform:
a rotation operation in which the rotation stage is repeatedly incrementally rotated in the same direction 360°; and
an irradiation operation in which the gaseous ion beam irradiation unit irradiates the entire surface of the tip end portion of the sample with the gaseous ion beams in conjunction with the incremental rotation of the rotation stage to remove implanted ions from the tip end portion.
10. The charged particle beam apparatus according to claim 9 ; wherein the control unit is configured to alternately perform the rotation operation and the irradiation operation.
11. The charged particle beam apparatus according to claim 9 ; wherein the control unit is configured to simultaneously perform the rotation operation and the irradiation operation.
12. The charged particle beam apparatus according to claim 9 ; wherein the control unit is configured to perform an irradiation operation in which the ion beam irradiation unit repeatedly irradiates the tip end portion of the sample with the ion beams at different circumferentially spaced irradiation positions to sharpen the tip end portion.
13. The charged particle beam apparatus according to claim 9 ; wherein the sample is composed of semiconductor material.
14. The charged particle beam apparatus according to claim 13 ; wherein the ion beam irradiation unit includes a liquid gallium ion source that produces gallium ion beams, and the semiconductor material of the sample contains silicon.
15. The charged particle beam apparatus according to claim 9 , wherein the control unit is configured to control the charged particle beam apparatus to process the sample into a needle shape suitable for use in atom probe analysis.