Semiconductor device
To reinforce power supply wirings without sacrificing the interconnectivity of semiconductor devices. When three wirings are formed in parallel in the same wiring layer and the center wiring among them is shorter than the outer wirings, a projecting portion integrated into the outer wiring is formed utilizing a free space remaining on the extension of the center wiring. For example, when the outer wirings are used as power supply wirings, the power supply wirings can be reinforced by adding the projecting portion. At this time, because the projecting portion is arranged in the free space, the interconnectivity is not sacrificed.
1. A semiconductor device, comprising:
a first wiring arranged in a first wiring layer;
a second wiring arranged in the first wiring layer;
a third wiring arranged in the first wiring layer between the first and second wirings;
a first projecting portion integrally formed with the first wiring between the first and second wirings in the first wiring layer;
a fourth wiring arranged in a second wiring layer, the fourth wiring intersecting with the first wiring and the first projecting portion;
a first via coupling between the first wiring and the fourth wiring; and
a second via coupling between the first projecting portion and the fourth wiring, wherein the first and second wirings are power supply voltage lines; and
wherein a voltage of the first wiring is higher than a voltage of the second wiring.
2. The semiconductor device according to claim 1 ,
wherein the first to fourth wirings, the first projecting portion, and the first and second vias are incorporated with a Static Random Access Memory (SRAM).
3. The semiconductor device according to claim 2 ,
wherein the third wiring is connected to a memory cell of the SRAM.
4. The semiconductor device according to claim 1 , the first projecting portion is formed at a portion of the first wiring where the first and second wirings are without the third wiring between them.
5. The semiconductor device according to claim 1 , wherein the third wiring is parallel to the first and second wirings.
6. The semiconductor device according to claim 1 , wherein the fourth wiring intersects with the second wiring.
7. A semiconductor device, comprising:
a first wiring arranged in a first wiring layer;
a second wiring arranged in the first wiring layer;
a third wiring arranged in the first wiring layer between the first and second wiring;
a first projecting portion integrally formed with the first wiring between the first and second wirings in the first wiring layer;
a fourth wiring arranged in a second wiring layer, the fourth wiring intersecting with the first wiring and the first projecting portion;
a first via coupling between the first wiring and the fourth wiring; and
a second via coupling between the first projecting portion and the fourth wiring,
wherein the third wiring is shorter than the first and second wirings in a first direction, and
wherein the first and second vias are arranged in a second direction perpendicular to the first direction.
8. The semiconductor device according to claim 7 ,
the first projecting portion is formed at a portion of the first wiring where the first and second wirings are without the third wiring between them.
9. The semiconductor device according to claim 7 , wherein the first to fourth wirings, the first projecting portion, and the first and second vias are incorporated with a Static Random Access Memory (SRAM).
10. The semiconductor device according to claim 9 , wherein the third wiring is connected to a memory cell of the SRAM.
11. The semiconductor device according to claim 7 , wherein the third wiring is parallel to the first and second wirings.
12. The semiconductor device according to claim 7 , wherein the fourth wiring intersects with the second wiring.
13. A semiconductor device comprising:
a first wiring arranged in a first wiring layer;
a second wiring arranged in the first wiring layer;
a third wiring arranged in the first wiring layer between the first and second wirings;
a first projecting portion integrally formed with the first wiring between the first and second wirings in the first wiring layer;
a fourth wiring arranged in a second wiring layer, the fourth wiring intersecting with the first wiring and the first projecting portion;
a first via coupling between the first wiring and the fourth wiring;
a second via coupling between the first projecting portion and the fourth wiring;
a second projecting portion integrally formed with the second wiring between the first and second wirings in the first wiring layer;
a third via coupling between the second wiring and a fifth wiring; and
a fourth via coupling between the second projecting portion and the fifth wiring.
14. The semiconductor device according to claim 13 , wherein the third wiring is parallel to the first and second wirings.
15. The semiconductor device according to claim 13 , wherein the fourth wiring intersects with the second wiring.
16. The semiconductor device according to claim 13 , wherein the first to fourth wirings, the first projecting portion, and the first and second vias are incorporated with a Static Random Access Memory (SRAM).
17. The semiconductor device according to claim 16 , wherein the third wiring is connected to a memory cell of the SRAM.
18. The semiconductor device according to claim 13 , the first projecting portion is formed at a portion of the first wiring where the first and second wirings are without the third wiring between them.