Method of using non-volatile memories for on-DIMM memory address list storage
An integrated circuit device. The device includes an address input(s) configured to receive address information from an address stream from an address command bus coupled to a host controller and an address output(s) configured to drive address information, and is coupled to a plurality of memory (DRAM) devices provided on a DIMM. The device has an address match table comprising a non-volatile memory device configured to store at least a revised address corresponding to a spare memory location and a bad address of at least one of the plurality of memory (DRAM) devices. The device has a control module configured to process and determine whether each address matches with a stored address in the address match table to identify the bad address and configured to replace the bad address with the revised address of the spare memory location.
1. A method of operating an integrated circuit device, the method comprising:
receiving address information using an address input(s) configured to receive the address information from an address stream of a host controller;
driving address information using an address output(s) configured to drive the address information, the address output(s) being coupled to a plurality of memory devices provided on a DIMM;
using an address match table comprising a non-volatile memory device, the non-volatile memory device configured to store at least a revised address and a bad address of at least one of the plurality of memory devices, the revised address corresponding to a spare memory location;
determining address information using a control module configured to determine the address information from the address stream from an address command bus coupled to the host controller during a run time operation, the control module configured to process each of the addresses from the address stream and determine whether each processed address matches with a stored address in the address match table to identify the bad address from the address stream and configured to replace the bad address from the address stream with the revised address of the spare memory location; and
operating a multiplexer coupled to the address input(s) and coupled to the address output(s).
2. The method of claim 1 wherein the bad cell information is selected from a lower performing cell, a weak cell, or a faulty cell.
3. The method of claim 1 wherein the non-volatile memory device is selected from a Flash memory device.
4. The method of claim 1 wherein the bad cell information is location information, the location information comprising address information or off set information.
5. The method of claim 1 further comprising a charge pump coupled to the non-volatile memory device to program the non-volatile memory device to store the bad cell information.
6. The method of claim 1 wherein the non-volatile memory device is coupled to a high voltage source to program the non-volatile memory device.
7. The method of claim 1 further comprising an external high voltage pin coupled to the non-volatile memory device, the external high voltage pin being a VREFCA pin for a DDR3or DDR4DIMM.
8. The method of claim 1 wherein the non-volatile memory device is configured on a register integrated circuit device.
9. The method of claim 1 wherein the non-volatile memory device is configured on a register integrated circuit device, the register integrated circuit device comprising:
a VREFCA pin;
a high voltage control circuit coupled to the VREFCA pin and configured to provide a high voltage for programming the non-volatile memory device during a programming mode and configured with the VREFCA pin; and
a plurality of volatile devices coupled to the register circuit memory device to form the DIMM.
10. The method of claim 1 further comprising a serial bus configured with the non-volatile memory device to program the non-volatile memory device, the serial bus comprising an SMBus.
11. The method of claim 1 further comprising a parallel interface bus configured with the non-volatile memory device to program the non-volatile memory device; and a temporary storage device, the temporary storage device being coupled the non-volatile memory device to buffer the bad cell information before programming the information into the non-volatile memory.
12. The method of claim 11 wherein the temporary storage device is selected from a register or an SRAM device; wherein the bad cell information is provided in a compressed mode.
13. The method of claim 1 further comprising a compression engine coupled to the non-volatile memory device to process the bad memory cell information; and a decompression engine coupled to the non-volatile memory device.
14. The method of claim 1 wherein the non-volatile memory device comprises a plurality of memory arrays, two or more of the memory arrays being configured to allow for a read or write operation in parallel upon a reset operation; and further comprising an on-chip clock coupled to the plurality of memory arrays.