Room temperature metal direct bonding
View Patent ↗A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.
1. A bonding method, comprising:
forming a first plurality of metallic pads in a first insulating layer;
forming a second plurality of metallic pads in a second insulating layer;
polishing the first and second insulating layers having the first and second pluralities of metallic pads formed therein, respectively;
directly contacting the first insulating layer with the second insulating layer;
after directly contacting the first and second insulating layers, chemically bonding the first insulating layer to the second insulating layer without applying external pressure;
after directly contacting the first and second insulating layers, generating internal pressure, without applying external pressure, between the first plurality of metallic pads and the second plurality of metallic pads to form a contact between a first metallic pad of the first plurality of metallic pads and a second metallic pad of the second plurality of metallic pads.
2. The method as recited in claim 1 , wherein at least one of the first and second insulating layers comprises a silicon oxide layer.
3. The method as recited in claim 2 , comprising:
exposing the silicon oxide layer to one of an argon; nitrogen, and oxygen plasma.
4. The method as recited in claim 1 , comprising:
exposing at least one of the first and second insulating layers to a plasma process.
5. The method as recited in claim 1 , comprising:
exposing at least of one of the first and second insulating layers to one of an argon, nitrogen, and oxygen plasma.
6. The method as recited in claim 1 , comprising:
polishing at least one of the first and second insulating layers to a surface roughness less than 15 angstroms.
7. The method as recited in claim 1 , comprising:
forming said first and second insulating layers to have planar upper surfaces; and
forming said first and second metallic pads to have planar upper surfaces below the substantially planar upper surfaces of said first and second insulating layers.
8. The method as recited in claim 1 , comprising:
bonding the first insulating layer to the second insulating layer in ambient.
9. The method as recited in claim 1 , comprising:
bonding the first insulating layer to the second insulating layer at room temperature.
10. The method as recited in claim 1 , wherein at least one of the first and second insulating layers comprises a silicon nitride layer.
11. The method as recited in claim 1 , comprising:
forming a plurality of metallic vias respectively connected to the first plurality of metallic pads.
12. The method as recited in claim 1 , comprising:
cleaning upper surfaces of the first and second plurality of metallic pads.
13. The method as recited in claim 1 , comprising:
forming the first metallic pad to have an area different than an area of the second metallic pad.
14. The method as recited in claim 1 , comprising:
bonding the first insulating layer to the second insulating layer such that a perimeter of the first metallic pad is within a perimeter of the second metallic pad.
15. The method recited in claim 1 , comprising:
forming one of a palladium layer and a gold layer on at least one of the first and second metallic pads.
16. The method recited in claim 1 , further comprising:
heating in a range of 100-250° C.