Method of etching a boron doped carbon hardmask
In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CH 4 into a processing chamber. Forming a plasma in the process chamber from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other embodiments, the process gas utilized to etch the boron doped hardmask layer includes CH 4 , Cl 2 , SF 6 and O 2 .
1. A method for etching a boron doped amorphous carbon hardmask layer, comprising:
flowing a process gas comprising Cl 2 , CH 4 , SF 6 , and O 2 into a processing chamber;
forming a plasma in the processing chamber from the process gas;
etching the boron doped amorphous carbon hardmask layer in the presence of the plasma; and
forming a polymer coating on sidewalls of a feature etched into the boron doped amorphous carbon hardmask layer with the process gas.
2. The method of claim 1 , wherein flowing the process gas comprises:
supplying between about 0 and about 2150 sccm/m 2 of substrate plan area of Cl 2 into the processing chamber;
supplying between about 0 and about 2150 sccm/m 2 of substrate plan area of the CH 4 gas into the processing chamber;
supplying between about 0 and about 2150 sccm/m 2 of substrate plan area of SF 6 into the processing chamber; and
supplying between about 0 and about 2150 sccm/m 2 of substrate plan area of O 2 into the processing chamber.
3. The method of claim 1 , wherein forming the plasma comprises:
providing between 200 Watts and 2500 Watts of RF energy to one or more coils inductively coupled to the plasma.
4. The method of claim 1 , wherein etching the boron doped amorphous carbon hardmask layer comprises:
biasing the boron doped amorphous carbon hardmask layer with between 100 Watts and 1000 Watts of RF energy.
5. The method of claim 1 , wherein etching the boron doped amorphous carbon hardmask layer comprises:
forming a plurality of vertical features formed through an opening in the boron doped amorphous carbon hardmask layer.
6. The method of claim 5 wherein, the vertical features have a critical dimension and a ratio of the critical dimension for the top of the opening divided by the critical dimension for a bottom of the opening is greater than about 0.9, and a profile angle formed between the a sidewall of the vertical features and a plane of the opening in the boron doped amorphous carbon hardmask layer is greater than 89 degrees.
7. The method of claim 5 further comprising:
ashing a patterned masking layer disposed on top of the boron doped amorphous carbon hardmask layer.
8. The method of claim 7 , wherein the ashing of the patterned masking layer is performed in-situ the processing chamber.
9. The method of claim 1 further comprising:
etching an underlying layer deposed beneath the boron doped amorphous carbon hard mask layer in the processing chamber with a second process gas.
10. The method of claim 1 , wherein the feature has an aspect ratio of width to depth of less than or equal to about 1:4.
11. The method of claim 10 , wherein the feature has a critical dimension and a ratio for the critical dimension of the top of the feature divided by the critical dimension of a bottom of the feature is greater than 0.9, and a profile angle formed between the a sidewall of the feature and a plane of a surface for the boron doped amorphous carbon hardmask layer is greater than 89 degrees.
12. A method for etching a boron doped amorphous carbon hardmask layer, comprising:
flowing a process gas comprising CH 4 , Cl 2 , SF 6 and O 2 into a processing chamber;
forming a plasma in the processing chamber from the process gas;
etching a high aspect ratio feature in the boron doped amorphous carbon hardmask layer in the presence of the plasma having a profile angle formed between a sidewall of the high aspect ratio feature and a plane of the opening in the boron doped amorphous carbon hardmask layer greater than 89 degrees; and
forming a polymer coating on sidewalls of a feature etched into the boron doped amorphous carbon hardmask layer with the process gas.
13. The method of claim 12 wherein flowing the process gas comprises:
supplying between about 0 and about 2150 sccm/m 2 of substrate plan area of Cl 2 into the processing chamber;
supplying between about 0 and about 2150 sccm/m 2 of substrate plan area of CH 4 into the processing chamber;
supplying between about 0 and about 2150 sccm/m 2 of substrate plan area of SF 6 into the processing chamber; and
supplying between about 0 and about 2150 sccm/m 2 of substrate plan area of O 2 into the processing chamber.
14. The method of claim 12 wherein forming the plasma comprises:
providing between 200 Watts and 2500 Watts of RF energy to one or more coils inductively coupled to the plasma; and
biasing the boron doped amorphous carbon hardmask layer with between 100 Watts and 1000 Watts of energy.
15. The method of claim 12 , wherein the high aspect ratio feature have a critical dimension and a ratio of the critical dimension for the top of the opening divided by the critical dimension for a bottom of the opening is greater than 0.9.
16. The method of claim 12 , wherein the high aspect ratio feature has an aspect ratio of width to depth of less than or equal to about 1:4.
17. The method of claim 10 wherein the high aspect ratio feature has a critical dimension and a ratio for the critical dimension of the top of the feature divided by the critical dimension of a bottom of the feature is greater than 0.9.