Solid-state imaging apparatus, method of manufacturing the same, and electronic apparatus

1. A solid-state imaging apparatus, comprising:

at least two phase difference detection pixels adjacent to one another, each with a light receiving unit;

a lens overlying the at least two phase difference detection pixels; and

an isolation structure arranged so as to isolate light entering the light-receiving units of the plurality of phase difference detection pixels, the isolation structure positioned over a a point between the light receiving units, being tapered in cross section, and having one side wall surface that inclines toward one light receiving unit and another side wall surface that inclines toward another light receiving unit so that light from the lens enters the light receiving units.

2. The solid-state imaging apparatus according to claim 1 , wherein the lens is a microlens formed corresponding to the phase difference detection pixels.

3. The solid-state imaging apparatus according to claim 2 , wherein a difference between a refractive index of the isolation structure and a refractive index of a surrounding material of the isolation structure is at least 0.2.

4. The solid-state imaging apparatus according to claim 3 , wherein the refractive index of the isolation structure is about one.

5. The solid-state imaging apparatus according to claim 2 , wherein the microlens is formed so as to have a lens power higher than other microlens formed corresponding to imaging pixels arranged in a pixel region, together with the plurality of phase difference detection pixels.

6. The solid-state imaging apparatus according to claim 2 , wherein the isolation structure is formed so that the inclination of the side wall surface is adjusted in accordance with an isolation property of the phase difference detection pixels.

7. The solid-state imaging apparatus according to claim 2 , wherein the isolation structure is formed so that a width of an upper surface is adjusted in accordance with an isolation property of the plurality of phase difference detection pixels.

8. The solid-state imaging apparatus according to claim 2 , wherein a trench is formed between the light-receiving units of the phase difference detection pixels.

9. The solid-state imaging apparatus according to claim 2 , wherein the isolation structure has an antireflection film formed on an upper surface thereof.

10. The solid-state imaging apparatus according to claim 2 , wherein the plurality of phase difference detection pixels have an optical filter formed in a lower layer of the microlens.

11. The solid-state imaging apparatus according to claim 2 , wherein the isolation structure is trapezoidal in cross section.

12. The solid-state imaging apparatus according to claim 2 , comprising four phase difference detection pixels arranged in a matrix, wherein the microlens overlies all four phase difference detection pixels.

13. An electronic apparatus, comprising the solid-state imaging apparatus of claim 1 .

14. A method of manufacturing a solid-state imaging apparatus, comprising:

providing a structure with at least two phase difference detection pixels configured adjacent to one another; and

forming an isolation structure arranged so as to isolate light entering the light-receiving units of the plurality of phase difference detection pixels, the isolation structure positioned over a point between the light receiving units, being tapered in cross section, and having one side wall surface that inclines toward one light receiving unit and another side wall surface that inclines toward another light receive unit so that light from the lens enters the plurality of light receiving units; and

forming a lens that overlies the at least two phase difference detection pixels.