Solid state image sensor, production method thereof and electronic device
View Patent ↗A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.
1. An imaging device, comprising:
a semiconductor substrate including a plurality of pixels, each pixel of the plurality of pixels including photoelectric conversion regions for converting light into charges;
an insulating layer provided at a light-incident side of the semiconductor substrate;
a plurality of lower electrodes provided on a light-incident side of the insulating layer, each lower electrode of the plurality of lower electrodes corresponding to a pixel of the plurality of pixels;
a continuously formed organic photoelectric conversion film provided on a light-incident side of the plurality of lower electrodes;
a first upper electrode provided on a light-incident side of the organic photoelectric conversion film; and
a second upper electrode provided on a light-incident side of the first upper electrode, wherein the second upper electrode is formed on the first upper electrode at a region greater than a region where the first upper electrode is formed, wherein the second upper electrode connects a peripheral region of the second upper electrode to the insulating layer, and wherein the second upper electrode is configured to suppress an effect of a film stress on the organic photoelectric conversion film.
2. The imaging device according to claim 1 , wherein the first upper electrode and the second upper electrode are formed of a same material or a material having a property that is substantially the same.
3. The imaging device according to claim 1 , further comprising:
a second insulating layer provided on the first upper electrode such that ends of the organic photoelectric conversion film, the first upper electrode, and the second insulating layer are substantially coplanar.
4. The imaging device according to claim 1 , wherein the second upper electrode is formed around an outer periphery of the first upper electrode to connect ends of the first upper electrode and the insulating layer.
5. The imaging device according to claim 1 , wherein the second upper electrode is a stress adjustment insulation film laminated on the first upper electrode such that ends of the first upper electrode substantially conform with the stress adjustment insulation film, and the stress adjustment insulation film is formed under a condition where the film stress generated on the first upper electrode becomes substantially uniform.
6. An electronic device, comprising:
an image sensor, including:
a semiconductor substrate including a plurality of pixels, each pixel of the plurality of pixels including photoelectric conversion regions for converting light into charges;
an insulating layer provided at a light-incident side of the semiconductor substrate;
a plurality of lower electrodes provided on a light-incident side of the insulating layer, each lower electrode of the plurality of lower electrodes corresponding to a pixel of the plurality of pixels;
a continuously formed organic photoelectric conversion film provided on a light-incident side of the plurality of lower electrodes;
a first upper electrode provided on a light-incident side of the organic photoelectric conversion film; and
a second upper electrode provided on a light-incident side of the first upper electrode, wherein the second upper electrode is formed on the first upper electrode at a region greater than a region where the first upper electrode is formed, wherein the second upper electrode connects a peripheral region of the second upper electrode to the insulating layer, and wherein the second upper electrode is configured to suppress an effect of a film stress on the organic photoelectric conversion film.
7. The electronic device according to claim 6 , wherein the first upper electrode and the second upper electrode are formed of a same material or a material having a property that is substantially the same.
8. The electronic device according to claim 6 , further comprising:
a second insulating layer provided on the first upper electrode such that ends of the organic photoelectric conversion film, the first upper electrode, and the second insulating layer are substantially coplanar.
9. The electronic device according to claim 6 , wherein the second upper electrode is formed around an outer periphery of the first upper electrode to connect ends of the first upper electrode and the insulating layer.
10. The electronic device according to claim 6 , wherein the second upper electrode is a stress adjustment insulation film laminated on the first upper electrode such that ends of the first upper electrode substantially conform with the stress adjustment insulation film, and the stress adjustment insulation film is formed under a condition where the film stress generated on the first upper electrode becomes substantially uniform.
11. The electronic device according to claim 6 , wherein the organic photoelectric conversion film is disposed on a portion of the insulating layer between lower electrodes.
12. The electronic device according to claim 6 , wherein light-incident sides of the plurality of lower electrodes is substantially coplanar with the light-incident side of the insulating layer.
13. The imaging device according to claim 1 , wherein the organic photoelectric conversion film is disposed on a portion of the insulating layer between lower electrodes.
14. The imaging device according to claim 1 , wherein light-incident sides of the plurality of lower electrodes is substantially coplanar with the light-incident side of the insulating layer.