Bulk silicon carbide having low defect density
View Patent ↗A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.
1. A silicon carbide boule formed in a sublimation furnace, the silicon carbide boule having a flat substantially circular top surface comprising at least two carbonaceous coatings on a silicon carbide seed wafer, a curved outer surface that increases in diameter in a direction perpendicular from the silicon carbide seed wafer to an approximate center of a middle section having a substantially circular cross-sectional shape in a direction parallel to the flat top surface, and a conical outer dome having a surface opposite to the flat top surface.
2. The silicon carbide boule of claim 1 , wherein at least one of the carbonaceous coatings is cured.
3. The silicon carbide boule of claim 1 , wherein the silicon carbide boule comprises 2-5 coatings on the flat top surface forming a composite layer cured to form a seed protection layer.
4. The silicon carbide boule of claim 1 , wherein the silicon carbide boule has a maximum diameter greater than about 75 mm.
5. The silicon carbide boule of claim 4 , wherein the maximum diameter of the silicon carbide boule is from about 80 mm to about 85 mm.
6. The silicon carbide boule of claim 1 , wherein the silicon carbide boule has a maximum diameter greater than about 100 mm.
7. The silicon carbide boule of claim 6 , wherein the maximum diameter of the silicon carbide boule is from about 105 mm to about 115 mm.
8. The silicon carbide boule of claim 1 , wherein the silicon carbide boule has a maximum diameter greater than about 150 mm.
9. The silicon carbide boule of claim 8 , wherein the maximum diameter of the silicon carbide boule is from about 160 mm to about 170 mm.
10. The silicon carbide boule of claim 1 , wherein the silicon carbide boule has a maximum diameter greater than about 200 mm.
11. The silicon carbide boule of claim 10 , wherein the maximum diameter of the silicon carbide boule is from about 210 mm to about 230 mm.
12. The silicon carbide boule of claim 1 , wherein the silicon carbide boule has a total defect count of less than about 8000/cm 2 .
13. The silicon carbide boule of claim 12 , wherein the total defect count is less than about 6000/cm 2 .
14. The silicon carbide boule of claim 12 , wherein the silicon carbide boule has a threading edge dislocation density of less than about 4000/cm 2 .
15. The silicon carbide boule of claim 14 , wherein the threading edge dislocation density is less than about 2500/cm 2 .
16. The silicon carbide boule of claim 12 , wherein the silicon carbide boule has a threading screw dislocation density of less than about 3500/cm 2 .
17. The silicon carbide boule of claim 16 , wherein the threading screw dislocation density is less than about 3000/cm 2 .
18. The silicon carbide boule of claim 12 , wherein the silicon carbide boule has a basal plane defect density of less than about 500/cm 2 .
19. The silicon carbide boule of claim 18 , wherein the basal plane defect density is less than about 200/cm 2 .
20. The silicon carbide boule of claim 12 , wherein silicon carbide boule has a threading edge dislocation density of less than about 2500/cm 2 , a threading screw dislocation density of less than about 3000/cm 2 , and a basal plane defect density of less than about 200/cm 2 .