Semiconductor device and test method

1. A semiconductor device comprising:

a temperature detection circuit configured to detect whether or not a temperature reaches a detection temperature set to the temperature detection circuit by comparing potential of a reference block and reference potential, the potential of the reference block corresponding to a temperature to be detected, the reference potential corresponding to the detection temperature, the reference potential being varied by a control signal, the temperature detection circuit including the reference block, a generation unit configured to generate the reference potential with a value corresponding to a control value, and a comparator configured to compare the potential of the reference block and the reference potential and to output a comparison result as a detection result of the temperature detection circuit;

a test circuit configured to test, in a test mode, an operation of the temperature detection circuit by changing the control signal so as to serially switch a value of the reference potential to a value selected from a plurality of values, while a temperature of the semiconductor device is kept at a first temperature, the plurality of values being different from each other, the plurality of values being values according to a permissible range of a detection error of the temperature detection circuit;

a first register configured to hold a control value corresponding to a second temperature to be detected in a normal mode; and

a first switching unit configured to perform, in the test mode, switching to a first connection state in which a plurality of control values corresponding to the plurality of values is serially supplied from the test circuit to the generation unit and to perform, in the normal mode, switching to a second connection state in which the control value corresponding to the second temperature is supplied from the first register to the generation unit.

2. The semiconductor device according to claim 1 , further comprising a nonvolatile semiconductor memory,

wherein the first temperature is a temperature used for a high temperature test of the nonvolatile semiconductor memory.

3. The semiconductor device according to claim 1 , wherein the potential of the reference block changes depending on a temperature, and

the temperature detection circuit detects whether or not a temperature reaches the detection temperature according to a comparison result between the potential of the reference block and the reference potential.

4. The semiconductor device according to claim 3 , further comprising a control unit configured to determine whether or not the temperature detection circuit is operating within a permissible range according to a detection result of the temperature detection circuit.

5. The semiconductor device according to claim 4 , wherein the plurality of values includes:

a first value corresponding to a detection temperature at which a vicinity of the first temperature is an upper limit of a detection error; and

a second value corresponding to a detection temperature at which a vicinity of the first temperature is a lower limit of the detection error, and

in a case where a detection result of the temperature detection circuit in a first state, in which the reference potential is switched to the first value, is non-detection of a temperature and a detection result of the temperature detection circuit in a second state, in which the reference potential is switched to the second value, is detection of a temperature, the control unit determines that the temperature detection circuit is operating within the permissible range;

in a case where a detection result of the temperature detection circuit in the first state is the non-detection of a temperature and a detection result of the temperature detection circuit in the second state is the non-detection of a temperature, the control unit determines that the temperature detection circuit is operating outside the permissible range; and

in a case where a detection result of the temperature detection circuit in the first state is the detection of a temperature and a detection result of the temperature detection circuit in the second state is the detection of a temperature, the control unit determines that the temperature detection circuit is operating outside the permissible range.

6. The semiconductor device according to claim 5 , wherein the plurality of values further includes:

a third value corresponding to a detection temperature at which a temperature lower than the first temperature is an upper limit of the detection error; and

a fourth value corresponding to a detection temperature at which a temperature higher than the first temperature is a lower limit of the detection error, and

in a case where a detection result of the temperature detection circuit in a third state, in which the reference potential is switched to the third value, is the detection of a temperature, the control unit determines that the temperature detection circuit is operating outside the permissible range; and

in a case where a detection result of the temperature detection circuit in a fourth state, in which the reference potential is switched to the fourth value, is the non-detection of a temperature, the control unit determines that the temperature detection circuit is operating outside the permissible range.

7. The semiconductor device according to claim 1 , wherein

the comparator outputs, as a detection result of the detection of a temperature, a comparison result indicating that the potential of the reference block is higher than the reference potential and outputs, as a detection result of the non-detection of a temperature, a comparison result indicating that the potential of the reference block is lower than the reference potential.

8. The semiconductor device according to claim 1 , further comprising a first pad electrically connected to a control terminal of the first switching unit,

wherein, when receiving a test mode signal through the first pad, the first switching unit performs switching to the first connection state and when not receiving the test mode signal through the first pad, the first switching unit performs switching to the second connection state.

9. The semiconductor device according to claim 1 , wherein the test circuit includes:

a second switching unit configured to select a value of the plurality of control values corresponding to the plurality of values and to output the selected control value; and

a second register configured to hold the control value output from the second switching unit as a control value to be supplied to the generation unit in the test mode.

10. The semiconductor device according to claim 9 , further comprising a second pad electrically connected to a control terminal of the second switching unit,

wherein the second switching unit selects any of the plurality of control values corresponding to the plurality of values according to a select signal received through the second pad.

11. The semiconductor device according to claim 1 , further comprising a nonvolatile semiconductor memory,

wherein the semiconductor device is a memory card, and

the temperature detection circuit detects a temperature of the memory card.

12. A test method of a temperature detection circuit in a semiconductor device including a temperature detection circuit configured to compare potential of a reference block and reference potential and to detect whether or not a temperature reaches a detection temperature set to the temperature detection circuit, the potential of the reference block corresponding to a temperature to be detected, the reference potential corresponding to the detection temperature, the reference potential being varied by a control signal, the temperature detection circuit including the reference block, a generation unit configured to generate the reference potential with a value corresponding to a control value, and a comparator configured to compare the potential of the reference block and the reference potential and to output a comparison result as a detection result of the temperature detection circuit, the method comprising:

testing, in a test mode, an operation of the temperature detection circuit by changing the control signal so as to serially switch a value of the reference potential to a value selected from a plurality of values, while a temperature of the semiconductor device is kept at a first temperature, the plurality of values being different from each other, the plurality of values being values according to a permissible range of a detection error of the temperature detection circuit;

holding a control value, into a first register, corresponding to a second temperature to be detected in a normal mode;

switching, in the test mode, to a first connection state in which a plurality of control values corresponding to the plurality of values is serially supplied from the test circuit to the generation unit; and

switching, in the normal mode, to a second connection state in which the control value corresponding to the second temperature is supplied from the first register to the generation unit.

13. The test method according to claim 12 , wherein the semiconductor device further includes a nonvolatile semiconductor memory, and

the testing includes:

performing a high temperature test of the nonvolatile semiconductor memory while keeping the temperature of the semiconductor device at the first temperature; and

making the temperature detection circuit detect a temperature while serially switching a value of the reference potential to a value selected from the plurality of values, which are different from each other, with the temperature of the semiconductor device being kept at the first temperature.

14. The test method according to claim 12 , wherein the testing includes:

making the temperature detection circuit detect whether or not a temperature reaches the detection temperature while serially switching a value of the reference potential to a value selected from the plurality of values, with the temperature of the semiconductor device being kept at the first temperature; and

determining whether or not the temperature detection circuit is operating within the permissible range according to a detection result of the temperature detection circuit.

15. The test method according to claim 14 , wherein the plurality of values includes:

a first value corresponding to the detection temperature at which a vicinity of the first temperature is an upper limit of a detection error; and

a second value corresponding to the detection temperature at which a vicinity of the first temperature is a lower limit of the detection error, and

the determining includes:

determining that the temperature detection circuit is operating within the permissible range in a case where a detection result of the temperature detection circuit in a first state, in which the reference potential is switched to the first value, is non-detection of a temperature and a detection result of the temperature detection circuit in a second state, in which the reference potential is switched to the second value, is detection of a temperature;

determining that the temperature detection circuit is operating outside the permissible range in a case where a detection result of the temperature detection circuit in the first state is the non-detection of a temperature and a detection result of the temperature detection circuit in the second state is the non-detection of a temperature; and

determining that the temperature detection circuit is operating outside the permissible range in a case where a detection result of the temperature detection circuit in the first state is the detection of a temperature and a detection result of the temperature detection circuit in the second state is the detection of a temperature.

16. The test method according to claim 15 , wherein the plurality of values further includes:

a third value corresponding to the detection temperature at which a temperature lower than the first temperature is an upper limit of the detection error; and

a fourth value corresponding to the detection temperature at which a temperature higher than the first temperature is a lower limit of the detection error, and

the determining further includes:

determining that the temperature detection circuit is operating outside the permissible range in a case where a detection result of the temperature detection circuit in a third state, in which the reference potential is switched to the third value, is the detection of a temperature; and

determining that the temperature detection circuit is operating outside the permissible range in a case where a detection result of the temperature detection circuit in a fourth state, in which the reference potential is switched to the fourth value, is the non-detection of a temperature.

17. The test method according to claim 12 , wherein the testing includes:

making the temperature detection circuit detect whether or not a temperature reaches the detection temperature while serially switching a value of the reference potential to a value selected from two or more values, which are different from each other, with a temperature of the semiconductor device being kept at a third temperature corresponding to an ordinary temperature;

determining a value of the reference potential corresponding to the third temperature according to a detection result of the temperature detection circuit at the third temperature; and

determining the plurality of values to be used for a test of an operation of the temperature detection circuit according to the determined value of the reference potential.

18. The test method according to claim 13 , wherein the semiconductor device further includes a nonvolatile semiconductor memory, and

the testing includes:

performing an ordinary temperature test of the nonvolatile semiconductor memory while keeping a temperature of the semiconductor device at a third temperature corresponding to an ordinary temperature;

making the temperature detection circuit detect whether or not a temperature reaches the detection temperature while serially switching, in a state being kept at the third temperature, a value of the reference potential to a value selected from two or more values which are different from each other;

determining a value of the reference potential corresponding to the third temperature according to a detection result of the temperature detection circuit at the third temperature; and

determining the plurality of values to be used for a test of an operation of the temperature detection circuit according to the determined value of the reference potential.