IP Library Granted Patent US 9,261,716
Granted Patent B2
US 9,261,716 · App. 14/482,337 · Granted Feb 16, 2016

Optical semiconductor device and optical semiconductor device control method

Inventor: Tomoyuki Akiyama (Yokohama, JP)
Assignee: FUJITSU LIMITED
G02F1/025G02F1/0147G02F2201/58G02F2203/60
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Quick Facts
Patent No.
US 9,261,716
App. No.
14/482,337
Granted
Feb 16, 2016
Kind
B2
Abstract

An optical semiconductor device includes a ring waveguide, and a serpentine waveguide configured to be optically connected to the ring waveguide and surround at least a part of the ring waveguide in a serpentine form. In the optical semiconductor device, the serpentine waveguide heats the ring waveguide by absorbing input light propagated from the ring waveguide to the serpentine waveguide.

Claims (37)

1. An optical semiconductor device comprising:

a ring waveguide; and

a serpentine waveguide configured to be optically connected to the ring waveguide and surround at least a part of the ring waveguide in a serpentine form, wherein

the serpentine waveguide heats the ring waveguide by absorbing input light propagated from the ring waveguide to the serpentine waveguide.

2. The optical semiconductor device as claimed in claim 1 , wherein

the serpentine waveguide is an impurity-doped waveguide.

3. The optical semiconductor device as claimed in claim 2 , further comprising:

a first conductivity type semiconductor layer configured to reside outside the ring waveguide; and

a second conductivity type semiconductor layer configured to reside inside the ring waveguide, wherein

the serpentine waveguide is formed on the first conductivity type semiconductor layer.

4. The optical semiconductor device as claimed in claim 3 , further comprising:

a pair of electrodes each connected to a corresponding one of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer.

5. The optical semiconductor device as claimed in claim 1 , wherein

the serpentine waveguide is a silicon waveguide which is not doped with impurities, and the silicon waveguide is covered with a first metallic film.

6. The optical semiconductor device as claimed in claim 5 , further comprising:

a first conductivity type semiconductor layer residing between the serpentine waveguide and the ring waveguide, wherein

the first metallic film covers the first conductivity type semiconductor layer as well as covering the silicon waveguide.

7. The optical semiconductor device as claimed in claim 6 , further comprising:

a second conductivity type semiconductor layer configured to reside inside the ring waveguide; and

a second metallic film configured to cover the second conductivity type semiconductor layer.

8. The optical semiconductor device as claimed in claim 1 , further comprising:

a heater configured to heat the ring waveguide.

9. An optical semiconductor device comprising:

a ring waveguide; and

a serpentine waveguide configured to be optically connected to the ring waveguide and surround at least a part of the ring waveguide in a serpentine form, wherein

the serpentine waveguide has an absorption ability with respect to input light and is configured to heat the ring waveguide by absorbing the input light propagated from the ring waveguide to the serpentine waveguide.

10. An optical semiconductor device comprising:

a ring waveguide; and

a serpentine waveguide configured to be optically connected to the ring waveguide and surround at least a part of the ring waveguide in a serpentine form, wherein

the serpentine waveguide has an absorption ability with respect to input light and is configured to heat the ring waveguide by absorbing the input light propagated from the ring waveguide to the serpentine waveguide, and wherein

the serpentine waveguide is an impurity-doped waveguide.

11. The optical semiconductor device as claimed in claim 10 , further comprising:

a first conductivity type semiconductor layer configured to reside outside the ring waveguide; and

a second conductivity type semiconductor layer configured to reside inside the ring waveguide, wherein

the serpentine waveguide is formed on the first conductivity type semiconductor layer.

12. The optical semiconductor device as claimed in claim 11 , further comprising:

a pair of electrodes each connected to a corresponding one of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2014
From: AKIYAMA, TOMOYUKI
To: FUJITSU LIMITED
Reel/Frame 033817/0887 →
Continuity (2)
Continuation PCTJP2012058445 · Mar 29, 2012
Related Publication 20140376851A1 · Dec 25, 2014