V trench dry etch
Methods of producing V-shaped trenches in crystalline substrates are described. The methods involve processing a patterned substrate with etch masking materials defining each side of exposed silicon (100). The exposed silicon (100) is exposed to remotely-excited halogen-containing precursor including chlorine or bromine. The plasma effluents formed from the halogen-containing precursor preferentially remove silicon from all exposed facets other than silicon (111). Etching the crystalline substrates with the plasma effluents produce at least two silicon (111) facets between two adjacent masking elements. Forming the silicon (111) facets may be accelerated by pretreating the crystalline substrates using a halogen-containing precursor locally excited in a biased plasma to initiate the generation of the trench.
1. A method of etching a patterned substrate, the method comprising:
placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises a horizontal Si(100) facet disposed between two adjacent silicon oxide portions;
flowing a first halogen-containing precursor into the substrate processing region while forming a local plasma in the substrate processing region to initiate a trench in the horizontal Si(100) facet to form a remaining silicon portion, wherein the first halogen-containing precursor comprises one or more of fluorine, chlorine and bromine;
flowing a second halogen-containing precursor into a remote plasma region while forming a remote plasma in the remote plasma region by applying a remote plasma power to produce plasma effluents, wherein the second halogen-containing precursor comprises one or both of chlorine and bromine;
flowing the plasma effluents into the substrate processing region through through-holes in a showerhead; and
selectively etching the remaining silicon portion to form two Si(111) faces which intersect to form a V-shaped trench, wherein the patterned substrate is not exposed to external atmosphere between placing the patterned substrate into the substrate processing region and selectively etching the remaining silicon portion; and wherein the substrate processing region is plasma-free and fluorine-free during the selectively etching operation.
2. The method of claim 1 wherein any plasma power applied to the substrate processing region is less than 10% of the remote plasma power during the selectively etching operation.
3. The method of claim 2 wherein the substrate processing region is plasma-free during the selectively etching operation.
4. The method of claim 1 wherein an electron temperature within the substrate processing region is below 0.5 eV during the selectively etching operation.
5. The method of claim 1 wherein the second halogen-containing precursor comprises one or more of Cl 2 , XeCl 2 , BCl 3 , HCl, HBr, Br 2 and BBr 3 .
6. The method of claim 1 wherein flowing the second halogen-containing precursor into the remote plasma region further comprises flowing a hydrogen-containing precursor into the remote plasma region.
7. A method of etching a patterned substrate, the method comprising:
placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises a flat silicon facet disposed between two adjacent silicon-containing portions, wherein the flat silicon facet is covered with a native oxide;
flowing a first halogen-containing precursor into the substrate processing region while forming a local plasma in the substrate processing region to remove the native oxide and initiate a trench in the flat silicon facet to form a remaining silicon portion, wherein the first halogen-containing precursor comprises one or more of fluorine, chlorine and bromine;
flowing a second halogen-containing precursor into a remote plasma region while forming a remote plasma having a remote plasma power in the remote plasma region to produce plasma effluents, wherein the second halogen-containing precursor comprises one or both of chlorine and bromine;
flowing the plasma effluents into the substrate processing region through through-holes in a showerhead; and
selectively etching the remaining silicon portion to form two opposing silicon facets which form a substantially V-shaped trench, wherein the patterned substrate is not exposed to external atmosphere between placing the patterned substrate into the substrate processing region and selectively etching the remaining silicon portion; wherein any local plasma power applied to the substrate processing region during the selectively etching operation is less than 15% of the remote plasma power and wherein the substrate processing region and the remote plasma region are each devoid of fluorine during the selectively etching operation.
8. The method of claim 7 wherein the substrate processing region is plasma-free during the selectively etching operation.
9. The method of claim 7 wherein a distance between the lowest point in the substantially V-shaped trench and a line where two planes of the two opposing silicon facets would intersect is less than 20 Å.
10. A method of etching a patterned substrate, the method comprising:
placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises a silicon portion disposed between two adjacent masking portions;
flowing a halogen-containing precursor into the substrate processing region while forming a local plasma in the substrate processing region to initiate a trench in the silicon portion to form a remaining silicon portion;
flowing molecular chlorine or molecular bromine into a remote plasma region while forming a remote plasma in the remote plasma region to produce plasma effluents;
flowing the plasma effluents into the substrate processing region through through-holes in a showerhead; and
selectively etching the remaining silicon portion to form a “V”-shaped trench in the remaining silicon portion.
11. The method of claim 10 wherein the silicon portion has a horizontal Si(100) facet.
12. The method of claim 10 wherein a temperature of the patterned substrate is between 0° and 200°.
13. The method of claim 10 wherein at least one of two faces of the “V” are Si(111) facets.
14. The method of claim 10 wherein the “V”-shaped trench exhibits an angle of between 69° and 72° within the “V”.
15. The method of claim 10 wherein the substrate processing region is fluorine-free during the operation of selectively etching the remaining silicon portion.