Method and material for protecting magnetic information storage media
View Patent ↗A method of protecting a magnetic information storage medium is described. The method includes fabricating a film over a surface of the magnetic information storage medium. The film includes an amorphous, uniform, homogeneous solid solution of carbon, hydrogen, silicon, and oxygen. A magnetic storage medium with such a protective film is described.
1. A method of protecting a magnetic information storage medium comprising: fabricating a single layer protective film in direct contact with a magnetic recording film of a storage medium, wherein the protective film comprises an amorphous, uniform, homogeneous solid solution of carbon, hydrogen, silicon, and oxygen and wherein the protective film has an average thickness between 1nanometer and 10nanometers, inclusive, in any multiple of 0.1nanometer.
2. The method of claim 1 , wherein fabricating a film comprises using plasma immersion ion implantation and deposition (PIIID).
3. The method of claim 1 , wherein fabricating a film comprises using a deposition method comprising at least one of plasma-enhanced chemical vapor deposition (PECVD), filtered cathodic arc (f-CVA), facing target sputtering, or hot filament chemical vapor deposition.
4. The method of claim 1 , wherein fabricating a film comprises creating a film comprising silicon oxide-doped diamond-like carbon (SiO-DLC).
5. The method of claim 1 , wherein fabricating a film comprises fabricating a film having a thickness less than 6nanometers with uniform structure and composition throughout the 6nanometer thickness.
6. The method of claim 1 , wherein fabricating a film comprises fabricating a film having a thickness less than or equal to 2nanometers with uniform structure and composition throughout the 2nanometer thickness.
7. The method of claim 1 , wherein fabricating a film comprises fabricating a film having a root-mean-square roughness of less than 0.1nanometer over any area of at least 100square micrometers.
8. The method of claim 1 , wherein fabricating the film comprises fabricating a film that maintains sufficient density, sufficient hardness, and sufficient thickness to protect the magnetic information storage medium from corrosion and wear at all temperatures up to and including at least 300degrees Celsius.
9. The method of claim 1 wherein fabricating the film comprises fabricating a film that maintains sufficient density, sufficient hardness, sufficient thickness, and sufficient resistance to corrosion to protect the magnetic information storage medium from corrosion and wear at all temperatures up to and including at least 300degrees Celsius in the presence of oxygen.
10. The method of claim 1 , wherein fabricating a film comprises fabricating a film in which the structure, composition, and thickness are substantially unchanged over an area up to 3square meters.
11. A magnetic storage medium, comprising:
a structural substrate:
a recording film on the structural substrate, the recording film comprising a magnetic material configured to store information using magnetization; and
a single layer protective film in direct contact with the recording film, the protective film comprising an amorphous, uniform, homogeneous solid solution of carbon, hydrogen, silicon, and oxygen wherein the film has an average thickness between 1nanometer and 10nanometers, inclusive, in any multiple of 0.1nanometer.
12. The magnetic storage medium of claim 11 , wherein the protective film comprises a film fabricated using plasma immersion ion implantation and deposition (PIIID).
13. The magnetic storage medium of claim 11 wherein the protective film comprises a film fabricated using a deposition method comprising at least one of plasma-enhanced chemical vapor deposition (PECVD), filtered cathodic arc (f-CVA), facing target sputtering, or hot filament chemical vapor deposition.
14. The magnetic storage medium of claim 11 , wherein the protective film comprises silicon oxide-doped diamond-like carbon (SiO-DLC).
15. The magnetic storage medium of claim 11 , wherein the protective film has a thickness less than 6nanometers with uniform structure and composition throughout the 6nanometer thickness.
16. The magnetic storage medium of claim 11 , wherein the protective film has a thickness less than or equal to 2nanometers with uniform structure and composition throughout the 2nanometer thickness.
17. The magnetic storage medium of claim 11 , wherein the protective film has a root-mean-square roughness of less than 0.1nanometer over any given area of at least 100square micrometers.
18. The magnetic storage medium of claim 11 , wherein the protective film maintains sufficient density, sufficient hardness, and sufficient thickness to protect the recording film from corrosion and wear at all temperatures up to and including at least 300degrees Celsius.
19. The magnetic storage medium of claim 11 , wherein the protective film maintains sufficient density, sufficient hardness, sufficient thickness, and sufficient resistance to corrosion to protect the recording film from corrosion and wear at all temperatures up to and including at least 300degrees Celsius in the presence of oxygen.
20. The magnetic storage medium of claim 11 , wherein the protective film has structure, composition, and thickness substantially unchanged over an area of at least 1square meter.
21. The magnetic storage medium of claim 11 , wherein the protective film maintains sufficient density, sufficient hardness, sufficient thickness, and sufficient resistance to corrosion to protect the recording film from corrosion and wear at all temperatures up to and including at least 600degrees Celsius, with or without the presence of oxygen.
22. The method of claim 1 wherein fabricating the film comprises fabricating a film that maintains sufficient density, sufficient hardness, sufficient thickness, and sufficient resistance to corrosion to protect the magnetic information storage medium from corrosion and wear at all temperatures up to and including at least 600degrees Celsius, with or without the presence of oxygen.