Semiconductor device, manufacturing method thereof, and electronic device
The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first transistor including a single crystal semiconductor as a channel;
forming a first insulating film over the first transistor;
forming an oxide semiconductor film over the first insulating film;
forming a first conductive film over the oxide semiconductor film;
forming an inorganic film over the first conductive film;
forming a first mask over the inorganic film;
forming a second mask including the inorganic film by processing the inorganic film using the first mask as a mask;
forming an opening in the first conductive film, the oxide semiconductor film, and the first insulating film using the second mask as a mask; and
forming a second conductive film which penetrates the first conductive film, the oxide semiconductor film, and the first insulating film in the opening,
wherein the first mask is a resist mask,
wherein the oxide semiconductor film and the first conductive film are included in a second transistor, and
wherein the second conductive film is electrically connected to the first transistor and the second transistor.
2. The method for manufacturing a semiconductor device according to claim 1 , further comprising the step of:
polishing the second conductive film.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein a width of a bottom surface of the second conductive film is 5 nm or less.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein the first conductive film is in contact with a source region or a drain region of the first transistor.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein, assuming that a center of a top surface of a gate electrode of the first transistor is at an apex of an inverted square pyramid with a square and first to fourth isosceles triangles each having a vertex angle of 120° or less, a bottom surface of the oxide semiconductor film fits inside the square.
6. The method for manufacturing a semiconductor device according to claim 5 ,
wherein the center of the top surface of the gate electrode of the first transistor and a center of a top surface of a gate electrode of the second transistor overlap with each other, and
wherein the center of the top surface of the gate electrode of the first transistor and a center of a top surface of the oxide semiconductor film overlap with each other.
7. The method for manufacturing a semiconductor device according to claim 1 , further comprising a capacitor between the first transistor and the second transistor.
8. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first transistor including a single crystal semiconductor as a channel;
forming a first insulating film over the first transistor;
forming an oxide semiconductor film over the first insulating film;
forming a first conductive film over the oxide semiconductor film;
forming an inorganic film over the first conductive film;
forming a first mask over the inorganic film with an organic resin film therebetween;
forming a second mask including the inorganic film by processing the inorganic film using the first mask as a mask;
forming an opening in the first conductive film, the oxide semiconductor film, and the first insulating film using the second mask as a mask; and
forming a second conductive film which penetrates the first conductive film, the oxide semiconductor film, and the first insulating film in the opening,
wherein the first mask is a resist mask,
wherein the oxide semiconductor film and the first conductive film are included in a second transistor, and
wherein the second conductive film is electrically connected to the first transistor and the second transistor.
9. The method for manufacturing a semiconductor device according to claim 8 , further comprising the step of:
polishing the second conductive film.
10. The method for manufacturing a semiconductor device according to claim 8 , wherein a width of a bottom surface of the second conductive film is 5 nm or less.
11. The method for manufacturing a semiconductor device according to claim 8 , wherein the first conductive film is in contact with a source region or a drain region of the first transistor.
12. The method for manufacturing a semiconductor device according to claim 8 , wherein, assuming that a center of a top surface of a gate electrode of the first transistor is at an apex of an inverted square pyramid with a square and first to fourth isosceles triangles each having a vertex angle of 120° or less, a bottom surface of the oxide semiconductor film fits inside the square.
13. The method for manufacturing a semiconductor device according to claim 12 ,
wherein the center of the top surface of the gate electrode of the first transistor and a center of a top surface of a gate electrode of the second transistor overlap with each other, and
wherein the center of the top surface of the gate electrode of the first transistor and a center of a top surface of the oxide semiconductor film overlap with each other.
14. The semiconductor device according to claim 8 , further comprising a capacitor between the first transistor and the second transistor.
15. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first transistor including a single crystal semiconductor as a channel;
forming a first insulating film over the first transistor;
forming an oxide semiconductor film over the first insulating film;
forming a first conductive film over the oxide semiconductor film;
forming an inorganic film over the first conductive film;
forming a first mask over the inorganic film;
forming a second mask including the inorganic film by processing the inorganic film using the first mask as a mask;
forming a third mask including the inorganic film and the first conductive film by processing the first conductive film using the second as a mask;
forming an opening in the oxide semiconductor film, and the first insulating film using the third mask as a mask; and
forming a second conductive film which penetrates the first conductive film, the oxide semiconductor film, and the first insulating film in the opening,
wherein the first mask is a resist mask,
wherein the oxide semiconductor film and the first conductive film are included in a second transistor, and
wherein the second conductive film is electrically connected to the first transistor and the second transistor.
16. The method for manufacturing a semiconductor device according to claim 15 ,
wherein the first mask is formed over the inorganic film with an organic resin film.
17. The method for manufacturing a semiconductor device according to claim 15 , further comprising the step of:
polishing the second conductive film.
18. The method for manufacturing a semiconductor device according to claim 15 , wherein a width of a bottom surface of the second conductive film is 5 nm or less.
19. The method for manufacturing a semiconductor device according to claim 15 , wherein the first conductive film is in contact with a source region or a drain region of the first transistor.
20. The method for manufacturing a semiconductor device according to claim 15 , wherein, assuming that a center of a top surface of a gate electrode of the first transistor is at an apex of an inverted square pyramid with a square and first to fourth isosceles triangles each having a vertex angle of 120° or less, a bottom surface of the oxide semiconductor film fits inside the square.
21. The method for manufacturing a semiconductor device according to claim 20 ,
wherein the center of the top surface of the gate electrode of the first transistor and a center of a top surface of a gate electrode of the second transistor overlap with each other, and
wherein the center of the top surface of the gate electrode of the first transistor and a center of a top surface of the oxide semiconductor film overlap with each other.