IP Library › Granted Patent US 9,438,830
Granted Patent B2
US 9,438,830 · App. 14/491,775 · Granted Sep 6, 2016

Analog-to-digital converter and CMOS image sensor including the same

Inventors: Jin-Seon Kim (Gyeonggi-do, KR); Eun-Jun Kim (Gyeonggi-do, KR)
Assignee: SK Hynix Inc.
H04N5/3575H04N5/3742H04N5/37455
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Quick Facts
Patent No.
US 9,438,830
App. No.
14/491,775
Granted
Sep 6, 2016
Kind
B2
Abstract

A CMOS image sensor includes an active pixel array suitable for generating an active pixel signal, a dummy pixel array suitable for generating a dummy pixel signal, a row driver suitable for controlling the active pixel array and the dummy pixel array to simultaneously operate at a same column, and a correlated double sampling (CDS) array suitable for generating an active sampling signal and a dummy sampling signal, which are sampled from the active pixel signal and the dummy pixel signal by using a correlated double sampling, respectively, based on a first ramp signal and a second ramp signal, and comparing the active sampling signal with the dummy sampling signal.

Claims (64)

1. An analog-to-digital converter, comprising:

a ramp signal generator suitable for generating a first ramp signal and a second ramp signal; and

a correlated double sampling (CDS) array,

wherein the CDS array includes a CDS circuit at each column, and

wherein the CDS circuit includes:

a dummy sampling signal generation unit suitable for generating a dummy sampling signal, which is sampled from a dummy pixel signal outputted from a dummy pixel array by using a correlated double sampling, based on the first ramp signal;

an active sampling signal generation unit suitable for generating an active sampling signal, which is sampled from an active pixel signal outputted from an active pixel array by using a correlated double sampling, based on the second ramp signal, and

a comparison unit suitable for comparing the dummy sampling signal with the active sampling signal.

2. The analog-to-digital converter of claim 1 , wherein the dummy pixel array includes an optical black (OB) pixel array.

3. The analog-to-digital converter of claim 1 , wherein the dummy sampling signal generation unit and the active sampling signal generation unit have a differential input structure using a same circuit.

4. The analog-to-digital converter of claim 1 , wherein the dummy sampling signal generation unit includes:

a first switch suitable for controlling a transmission of the dummy pixel signal;

a first blocking capacitor coupled between an input node of the first ramp signal and an output node of the first switch; and

a first signal storage capacitor coupled to the output node of the first switch, and suitable for providing the dummy pixel signal.

5. The analog-to-digital converter of claim 4 , wherein the active sampling signal generation unit includes:

a second switch suitable for controlling a transmission of the active pixel signal;

a second blocking capacitor coupled between an input node of the second ramp signal and an output node of the second switch; and

a second signal storage capacitor coupled to the output node of the second switch, and suitable for providing the active sampling signal.

6. The analog-to-digital converter of claim 5 , wherein the first switch and the second switch have a same element, the first blocking capacitor and the second capacitor have a same element, and the first signal storage capacitor and the second signal storage capacitor have a same element.

7. The analog-to-digital converter of claim 1 , wherein the active pixel signal and the dummy pixel signal have a same noise characteristic, and the first ramp signal and the second ramp signal have a same noise characteristic.

8. The analog-to-digital converter of claim 1 , wherein an input of the comparison unit is expressed as,

Vin p −Vin m =(RAMP−RAMP_REF)−(APS_ O−OB _ O ),

where Vinp−Vinm denotes the input of the comparison unit, RAMP denotes the first ramp signal, RAMP_REF denotes the second ramp signal, APS_O denotes the active pixel signal and OB_O denotes the dummy pixel signal.

9. The analog-to-digital converter of claim 1 , wherein the dummy pixel array has a same horizontal characteristic as the active pixel array.

10. The analog-to-digital converter of claim 1 , wherein dummy pixels included in the dummy pixel array are matched one to one with active pixels included in the active pixel array at each column.

11. An analog-to-digital converter, comprising:

a correlated double sampling (CDS) array,

wherein the CDS array includes a CDS circuit at each column, and

wherein the CDS circuit includes:

a dummy sampling signal generation unit suitable for generating a dummy sampling signal, which is sampled from a dummy pixel signal outputted from a dummy pixel array by using a correlated double sampling;

an active sampling signal generation unit suitable for generating an active sampling signal, which is sampled from an active pixel signal outputted from an active pixel array by using a correlated double sampling; and

a comparison unit suitable for comparing the dummy sampling signal with the active sampling signal.

12. The analog-to-digital converter of claim 11 , wherein the dummy pixel array includes an optical black (OB) pixel array.

13. A CMOS image sensor, comprising:

an active pixel array suitable for generating an active pixel signal;

a dummy pixel array suitable for generating a dummy pixel signal;

a row driver suitable for controlling the active pixel array and the dummy pixel array to simultaneously operate at a same column; and

a correlated double sampling (CDS) array suitable for generating an active sampling signal and a dummy sampling signal, which are sampled from the active pixel signal and the dummy pixel signal by using a correlated double sampling, respectively, based on a first ramp signal and a second ramp signal, and comparing the active sampling signal with the dummy sampling signal.

14. The CMOS image sensor of claim 13 , wherein the dummy pixel array includes an optical black (OB) pixel array.

15. The CMOS image sensor of claim 13 , wherein the CDS array includes a CDS circuit at each column, and

wherein the CDS circuit includes:

a dummy sampling signal generation unit suitable for generating the dummy sampling signal sampled from the dummy pixel signal based on the first ramp signal;

an active sampling signal generation unit suitable for generating the active sampling signal from the active pixel signal based on the second ramp signal; and

a comparison unit suitable for comparing the dummy sampling signal with the active sampling signal.

16. The CMOS image sensor of claim 15 , wherein the dummy sampling signal generation unit and the active sampling signal generation unit include a differential input structure using a same circuit.

17. The CMOS image sensor of claim 15 , wherein an input of the comparison unit is expressed as,

Vin p −Vin m =(RAMP−RAMP_REF)−(APS_ O−OB _ O ),

where Vinp−Vinm denotes the input of the comparison unit, RAMP denotes the first ramp signal, RAMP_REF denotes the second ramp signal, APS_O denotes the active pixel signal and OB_O denotes the dummy pixel signal.

18. The CMOS image sensor of claim 13 , wherein the active pixel signal and the dummy pixel signal have a same noise characteristic, and the first ramp signal and the second ramp signal have a same noise characteristic.

19. The CMOS image sensor of claim 13 , wherein the dummy pixel array is disposed along a row direction to form at least a row and to have a same horizontal characteristic as the active pixel array.

20. The CMOS image sensor of claim 13 , wherein dummy pixels included in the dummy pixel array are matched one to one with active pixels included in the active pixel array at each column.

21. A CMOS image sensor, comprising:

an active pixel array suitable for generating an active pixel signal;

a dummy pixel array suitable for generating a dummy pixel signal;

a row driver suitable for controlling the active pixel array and the dummy pixel array to simultaneously operate at a same column; and

a correlated double sampling (CDS) array suitable for generating an active sampling signal and a dummy sampling signal, which are sampled from the active pixel signal and the dummy pixel signal by using a correlated double sampling, respectively, and comparing the active sampling signal with the dummy sampling signal.

22. The CMOS image sensor of claim 21 , wherein the dummy pixel array includes an optical black (OB) pixel array.

23. The CMOS image sensor of claim 21 , wherein the dummy pixel array is disposed along a row direction to have a same horizontal characteristic as the active pixel array.

24. A CMOS image sensor, comprising:

an active pixel array suitable for generating an active pixel signal;

a dummy pixel array suitable for generating a dummy pixel signal, wherein the dummy pixel array includes dummy pixels corresponding one to one to active pixels included in the active pixel array at each column;

a row driver suitable for controlling the active pixel array and the dummy pixel array to simultaneously operate at a same column; and

a correlated double sampling (CDS) array suitable for generating an active sampling signal and a dummy sampling signal, which are sampled from the active pixel signal and the dummy pixel signal by using a correlated double sampling.

25. The CMOS image sensor of claim 24 , wherein the dummy pixel array includes an optical black (OB) pixel array.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 19, 2014
From: KIM, JIN-SEON; KIM, EUN-JUN
To: SK HYNIX INC.
Reel/Frame 033782/0210 →
Priority Claims (1)
KR 10-2014-0036759 · Mar 28, 2014 · national
Continuity (1)
Related Publication 20150281603A1 · Oct 1, 2015