Method for the reuse of gallium nitride epitaxial substrates
A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.
1. A method for reusing a III-nitride substrate, comprising:
providing an epitaxy-ready bulk III-nitride substrate;
growing one or more sacrificial layers on or above the substrate, wherein the sacrificial layers comprise one or more In x Ga 1-x N layers where 0<x<1;
growing one or more device layers on or above the sacrificial layers; and
selectively etching the sacrificial layers to separate the device layers from the substrate without substantially etching the device layers or the substrate.
2. The method of claim 1 , wherein the device layers comprise one or more III-nitride layers or regions.
3. The method of claim 1 , wherein the sacrificial layers are selectively etched using band-gap-selective photoelectrochemical etching.
4. The method of claim 3 , wherein the band-gap-selective photoelectrochemical etching comprises:
submerging a sample comprised of the substrate, sacrificial layers and device layers in an electrolyte solution;
exposing the submerged sample to light that is above the bandgap of the sacrificial layers, but below the bandgap of the substrate or device layers, to allow for the etching of the sacrificial layers, while preventing undesirable etching of the substrate or device layers.
5. The method of claim 1 , further comprising growing an epitaxial layer on or above the substrate, wherein the sacrificial layers are grown on or above the epitaxial layer.
6. The method of claim 1 , wherein the sacrificial layers are selectively etched laterally and, after some time, are completely removed, freeing the substrate from the device layers.
7. The method of claim 1 , wherein the substrate is processed after the device layers are separated from the substrate to prepare the substrate for reuse.
8. The method of claim 1 , wherein an etch is performed to expose the sacrificial layers before the sacrificial layers are selectively etched.
9. A substrate processed using the method of claim 1 .
10. A method for reusing a III-nitride substrate, comprising:
providing an epitaxy-ready bulk III-nitride substrate;
growing one or more sacrificial layers on or above the substrate;
growing one or more device layers on or above the sacrificial layers; and
selectively etching the sacrificial layers to separate the device layers from the substrate without substantially etching the device layers or the substrate;
wherein the sacrificial layers are selectively etched using band-gap-selective photoelectrochemical etching and the band-gap-selective photoelectrochemical etching comprises:
submerging a sample comprised of the substrate, sacrificial layers and device layers in an electrolyte solution;
exposing the submerged sample to light that is above the bandgap of the sacrificial layers, but below the bandgap of the substrate or device layers, to allow for the etching of the sacrificial layers, while preventing undesirable etching of the substrate or device layers; and
further comprising making contact to an epitaxial layer grown underneath the sacrificial layers in order to aid in extraction of carriers during the band-gap-selective photoelectrochemical etching.
11. A structure, comprising:
an epitaxy-ready bulk III-nitride substrate;
one or more sacrificial layers on or above the substrate, wherein the sacrificial layers comprise one or more In x Ga 1-x N layers where 0<x<1; and
one or more device layers on or above the sacrificial layers;
wherein the sacrificial layers are selectively etched layers used to separate the device layers from the substrate without the device layers or the substrate being substantially etched.
12. The structure of claim 11 , wherein the device layers comprise one or more III-nitride layers or regions.
13. The structure of claim 11 , wherein the selectively etched layers are photoelectrochemical etched layers.
14. The structure of claim 13 , wherein a contact is made to an epitaxial layer grown underneath the sacrificial layers in order to aid in extraction of carriers during band-gap-selective photoelectrochemical etching.
15. The structure of claim 11 , further comprising an epitaxial layer grown on or above the substrate, wherein the sacrificial layers are grown on or above the epitaxial layer.
16. The structure of claim 11 , wherein the sacrificial layers are selectively etched laterally and, after some time, are completely removed, freeing the substrate from the device layers.
17. The structure of claim 11 , wherein the substrate is processed after the device layers are separated from the substrate to prepare the substrate for reuse.
18. The structure of claim 11 , wherein the sacrificial layers are exposed before being selectively etched.