Semiconductor device and manufacturing method of the same
Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
1. A semiconductor device, comprising:
a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer, wherein the substrate is a bonded substrate having a substrate including the first conductive layer and a substrate including the second conductive layer bonded together;
a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in at least part of the bottom of the large-diameter concave portion, wherein the bottom of the large-diameter concave portion is co-planar with the top of the first conductive layer;
a small-diameter concave portion extended from the large-diameter concave portion with the second conductive layer exposed at the bottom of the small-diameter concave portion;
a conductive member provided in a connection hole made up of the large and small-diameter concave portions to connect the first and second conductive layers; and
an interlayer insulating film exposed to the conductive member, the bottom of the large-diameter concave portion, and the top of the small-diameter concave portion.
2. The semiconductor device of claim 1 , wherein only a top surface of the first conductive layer is exposed at the bottom of the large-diameter concave portion, and wherein only a top surface of the second conductive layer is exposed at the bottom of the small-diameter concave portion.
3. A semiconductor device, comprising:
a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer, wherein the first conductive layer includes a top surface and a bottom surface;
a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in at least part of the bottom of the large-diameter concave portion, wherein the bottom of the large-diameter concave portion is co-planar with the top of the first conductive layer;
a small-diameter concave portion extended from the large-diameter concave portion with the second conductive layer exposed at the bottom of the small-diameter concave portion;
a conductive member provided in a connection hole made up of the large and small-diameter concave portions to connect the first and second conductive layers; and
an interlayer insulating film exposed to the conductive member, the bottom of the large-diameter concave portion, and the top of the small-diameter concave portion, wherein the interlayer insulating film includes a top surface and a bottom surface, and wherein the top surface of the interlayer insulating film is co-planar with the top surface of the first conductive layer.
4. A semiconductor device, comprising:
a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer, wherein the first conductive layer includes a top surface and a bottom surface;
a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in at least part of the bottom of the large-diameter concave portion, wherein the bottom of the large-diameter concave portion is co-planar with the top of the first conductive layer;
a small-diameter concave portion extended from the large-diameter concave portion with the second conductive layer exposed at the bottom of the small-diameter concave portion;
a conductive member provided in a connection hole made up of the large and small-diameter concave portions to connect the first and second conductive layers; and
an interlayer insulating film exposed to the conductive member, the bottom of the large-diameter concave portion, and the top of the small-diameter concave portion, wherein the interlayer insulating film includes a top surface and a bottom surface, and wherein the bottom surface of the interlayer insulating film is co-planar with the bottom surface of the first conductive layer.