Method of forming package systems having interposers
A package system includes a first integrated circuit disposed over an interposer. The interposer includes at least one molding compound layer including a plurality of electrical connection structures through the at least one molding compound layer. A first interconnect structure is disposed over a first surface of the at least one molding compound layer and electrically coupled with the plurality of electrical connection structures. The first integrated circuit is electrically coupled with the first interconnect structure.
1. A method comprising:
providing a first substrate;
forming a first interconnect layer on the first substrate;
attaching the first interconnect layer to a second substrate;
removing the first substrate after the attaching of the first interconnect layer to the second substrate;
after the removing of the first substrate, forming electrical connections on the first interconnect layer;
forming a molding compound over the first interconnect layer, the molding compound encircling each of the electrical connections;
forming a second interconnect layer on the molding compound; and
removing the second substrate.
2. The method of claim 1 , wherein the forming the electrical connections on the first interconnect layer comprises:
forming a patterned layer over the first interconnect layer, the patterned layer having openings;
forming a conductive material in the openings; and
removing the patterned layer.
3. The method of claim 2 , further comprising forming a conductive seed layer over the first interconnect layer prior to the forming the patterned layer, and further comprising removing exposed portions of the conductive seed layer after the removing the patterned layer.
4. The method of claim 1 , further comprising attaching a semiconductor substrate between adjacent ones of the electrical connections prior to the forming the molding compound.
5. The method of claim 4 , wherein the molding compound extends over the semiconductor substrate.
6. The method of claim 1 , further comprising forming external electrical connectors on the first interconnect layer prior to attaching to the second substrate.
7. The method of claim 6 , wherein the external electrical connectors comprise solder bumps.
8. The method of claim 1 , wherein the attaching is performed at least in part using thermosetting glue.
9. A method comprising:
providing a first substrate;
forming a first redistribution layer on the first substrate;
attaching the first substrate to a second substrate, the first redistribution layer being interposed between the first substrate and the second substrate;
removing the first substrate;
forming a patterned mask over the first redistribution layer, the patterned mask having openings;
forming a conductive material in the openings, thereby forming electrical connections, the electrical connections being in electrical contact with the first redistribution layer;
removing the patterned mask;
forming a molding compound over the first redistribution layer, the molding compound encircling each individual ones of the electrical connections;
forming a second redistribution layer on the molding compound; and
removing the second substrate.
10. The method of claim 9 , after removing the patterned mask, attaching an integrated circuit to the first redistribution layer.
11. The method of claim 10 , wherein the molding compound extends over the integrated circuit.
12. The method of claim 10 , further comprising forming a cap layer covering the integrated circuit, wherein a coefficient of thermal expansion (CTE) of the cap layer is substantially equal to a CTE of the molding compound to not cause delamination.
13. The method of claim 9 , further comprising forming a conductive seed layer over the first redistribution layer prior to the forming the patterned mask, and further comprising removing exposed portions of the conductive seed layer after the removing the patterned mask.
14. The method of claim 9 , wherein a metallic line pitch of the second redistribution layer is larger than a metallic line pitch of the first redistribution layer.
15. A method comprising:
providing a first substrate;
forming a dielectric layer over the first substrate;
forming a first redistribution layer over the dielectric layer;
attaching the first substrate to a second substrate such that the first redistribution layer is interposed between the first substrate and the second substrate;
removing the first substrate;
patterning the dielectric layer to expose contacts of the first redistribution layer;
forming a patterned mask over the first redistribution layer, the patterned mask having openings;
forming a conductive material in the openings, thereby forming electrical connections;
removing the patterned mask;
forming a molding compound over the first redistribution layer, the molding compound extending along all sidewalls of the electrical connections;
forming a second redistribution layer on the molding compound; and
removing the second substrate.
16. The method of claim 15 , after removing the patterned mask, attaching an integrated circuit to the first redistribution layer.
17. The method of claim 16 , wherein the molding compound extends over the integrated circuit.
18. The method of claim 15 , further comprising, after removing the first substrate, attaching an integrated circuit to the first redistribution layer and forming a cap layer covering the integrated circuit, wherein a coefficient of thermal expansion (CTE) of the cap layer is substantially equal to a CTE of the molding compound to not cause delamination.
19. The method of claim 15 , further comprising forming a conductive seed layer over the first redistribution layer prior to the forming the patterned mask, and further comprising removing exposed portions of the conductive seed layer after the removing the patterned mask.
20. The method of claim 15 , wherein a metallic line pitch of the second redistribution layer is larger than a metallic line pitch of the first redistribution layer.