Integrated device with defined heat flow

1. A method for fabricating an integrated device, comprising the steps of:

providing a heat removing element;

providing a substrate layer on the heat removing element, the substrate layer having one or more components, including a heat generating component;

forming a plurality of through-vias extending entirely through the substrate layer; and

forming, while applying a low-pressure atmosphere or a vacuum environment on the substrate layer, a hollow insulation region, by hermetically closing at least one of the through-vias,

wherein the hollow insulation region is a first vacuum gap, and

wherein the hollow insulation region partly encompasses the heat generating component and defines a heat flow channel in the substrate layer for channeling heat from the heat generating component to the heat removing element.

2. A method for fabricating an integrated device, comprising the steps of:

providing a base substrate having one or more components, including a heat generating component;

forming a first wiring and metallization layer on a first surface of the base substrate;

etching the first wiring and metallization layer to form a cavity therein; and

forming, while applying a low-pressure atmosphere or a vacuum environment on the first wiring and metallization, a lateral hollow insulation region, by hermetically closing the cavity, wherein the lateral hollow insulation region is a first vacuum gap,

wherein the lateral hollow insulation region partly encompasses the heat generating component and defines a heat flow channel in the base substrate for channeling heat from the heat generating component.

3. The method of claim 2 , further comprising:

forming, before forming the first wiring and metallization layer, a plurality of through-vias extending entirely through the base substrate; and

forming, while applying a low-pressure atmosphere or a vacuum environment on the substrate layer, a vertical hollow insulation region, by hermetically closing at least one of the through-vias extending entirely through the base substrate,

wherein the vertical hollow insulation region is a second vacuum gap, and

wherein the vertical hollow insulation region and the lateral hollow insulation region partly encompass the heat generating component and define the heat flow channel in the base substrate for channeling heat from the heat generating component.

4. The method of claim 3 , further comprising forming a through-via interconnection by providing an electrical conductive material to the base substrate to fill at least one of the through-vias, wherein the electrical conductive material is electrically connected to a second wiring and metallization layer disposed on a second surface of the base substrate opposite the first surface of the base substrate.

5. The method of claim 2 , further comprising forming the base substrate on a heat removing element, wherein the lateral hollow insulation region partly encompasses the heat generating component and defines the heat flow channel in the base substrate for channeling heat from the heat generating component and to the heat removing element.

6. The method of claim 1 , further comprising:

depositing a first metallization layer on the substrate layer;

etching the first metallization layer to form a cavity therein; and

forming, while applying a low-pressure atmosphere or a vacuum environment on the substrate layer, a lateral hollow insulation region, by hermetically closing the cavity, wherein the lateral hollow insulation region is a second vacuum gap,

wherein the hollow insulation region and the lateral hollow insulation region partly encompass the heat generating component and define the heat flow channel in the substrate layer for channeling heat from the heat generating component to the heat removing element.

7. The method of claim 6 , further comprising:

depositing a second substrate layer on the first metallization layer, the second substrate layer having one or more components;

forming a through-via extending entirely through the second substrate layer;

forming a through-via interconnection by providing an electrical conductive material to the second substrate layer to fill the through-via extending entirely through the second substrate layer; and

depositing a second metallization layer on the second substrate layer,

wherein the through-via interconnection electrically connects the first metallization layer to the second metallization layer.

8. The method of claim 1 , further comprising depositing a first metallization layer on the substrate layer prior to providing the substrate layer, wherein the first metallization layer is disposed between the heat removing element and the substrate layer.

9. The method of claim 8 , further comprising:

forming a through-via interconnection by providing an electrical conductive material to the substrate layer to fill at least one of the through-vias; and

depositing a second substrate layer and a second metallization layer on the substrate layer, the second substrate layer having one or more components, wherein the second metallization layer is disposed between the substrate layer and the second substrate layer and the through-via interconnection electrically connects the first metallization layer and the second metallization layer.

10. The method of claim 9 , further comprising:

etching the second metallization layer to form a cavity; and

forming, while applying a low-pressure atmosphere or a vacuum environment on the second substrate layer, a lateral hollow insulation region, by hermetically closing the cavity, wherein the lateral hollow insulation region is a second vacuum gap,

wherein the hollow insulation region and the lateral hollow insulation region partly encompass the heat generating component and define the heat flow channel in the integrated device for channeling heat from the heat generating component to the heat removing element.