Semiconductor device and manufacturing method thereof
A method of manufacturing a semiconductor structure includes receiving a substrate including a die pad disposed thereon; disposing a passivation over the substrate and around the die pad; disposing a polymer over the passivation; forming a post passivation interconnect (PPI) including an elongated portion and a via portion contacting with the die pad; depositing a metallic paste on the elongated portion of the PPI by a stencil; disposing a conductive bump over the metallic paste; and disposing a molding over the PPI and around the metallic paste and the conductive bump.
1. A method of manufacturing a semiconductor structure, comprising:
receiving a substrate including a die pad disposed thereon;
disposing a passivation over the substrate and around the die pad;
disposing a polymer over the passivation;
forming a post passivation interconnect (PPI) including an elongated portion and a via portion contacting with the die pad;
depositing a metallic paste on the elongated portion of the PPI by a stencil including an aperture corresponding to a predetermined position of the elongated portion of the PPI;
disposing a conductive bump over the metallic paste; and
disposing a molding over the PPI and around the metallic paste and the conductive bump.
2. The method of claim 1 , wherein the depositing the metallic paste includes screen printing the metallic paste over the stencil.
3. The method of claim 1 , wherein the depositing the metallic paste includes sweeping across the semiconductor structure over the stencil by a blade to remove the overflown metallic paste.
4. The method of claim 1 , wherein the aperture is configured to receive the metallic paste or the conductive bump.
5. The method of claim 1 , wherein the conductive bump is disposed by the stencil.
6. The method of claim 1 , further comprising curing the metallic paste to form a concavity for receiving the conductive bump.
7. The method of claim 1 , wherein the metallic paste includes a metal and an adhesive.
8. The method of claim 1 , further comprising curing the semiconductor structure before or after disposing the conductive bump.
9. The method of claim 1 , wherein the disposing the passivation includes forming a first opening above the die pad, and the via portion is disposed within the first opening.
10. The method of claim 1 , wherein the disposing the polymer includes forming a second opening above the die pad, and the via portion is disposed within the second opening.
11. A method of manufacturing a semiconductor structure, comprising:
receiving a substrate including a passivation disposed over the substrate and a die pad exposed from the passivation;
disposing a polymer over the passivation;
forming a post passivation interconnect (PPI) electrically connected to the die pad;
placing a stencil on the PPI;
filling an aperture of the stencil by a metallic paste;
disposing a conductive bump on the metallic paste;
removing the stencil; and
disposing a molding over the PPI and around the metallic paste and the conductive bump.
12. The method of claim 11 , wherein the aperture of the stencil is configured for receiving the metallic paste or the conductive bump.
13. The method of claim 11 , wherein the stencil is placed on the PPI during the filling of the metallic paste and the disposing of the conductive bump.
14. The method of claim 11 , wherein the aperture of the stencil is completely filled with the metallic paste by removing the metallic paste overflown from the opening.
15. A method of manufacturing a semiconductor structure, comprising:
receiving a substrate including a die pad disposed thereon and a post passivation interconnect (PPI) disposed over the substrate, wherein the PPI includes an elongated portion and a via portion contacting with the die pad;
placing a stencil over the PPI;
depositing a metallic paste at a predetermined position of the elongated portion of the PPI by the stencil;
disposing a conductive bump over the metallic paste; and
disposing a molding around the conductive bump and the metallic paste.
16. The method of claim 15 , wherein the disposing the conductive bump includes forming a concavity interfacing the metallic paste and the conductive bump, and the concavity is conformal to a portion of an outer surface of the conductive bump.
17. The method of claim 15 , wherein the metallic paste is encapsulated by the conductive bump.
18. The method of claim 15 , wherein the depositing the metallic paste includes forming the metallic paste with a width substantially same as or greater than a diameter of the conductive bump.
19. The method of claim 15 , wherein the metallic paste is encapsulated by the molding, and the conductive bump is partially exposed from the molding.
20. The method of claim 15 , wherein the conductive bump is held by the metallic paste.