Ultraviolet light emitting device doped with boron

1. A light emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers, the device comprising: a p-type layer; an n-type layer; a thickness of Al y Ga 1-y N material formed epitaxially and having an aluminum concentration greater than 0% and smaller than 100%; the thickness of the Al y Ga 1-y N material comprising a quantum well disposed between the p-type layer and n-type layer; and wherein the Al y Ga 1-y N material comprises a boron doping concentration between 1e15 and 1e20 atoms/centimeter.

2. The device of claim 1 wherein the boron doping concentration is configured within a spatial region of the thickness of Al y Ga 1-y N material; wherein an average lattice constant of the thickness Al y Ga 1-y N material is maintained; wherein the thickness of Al y Ga 1-y N material is single crystal material.

3. The device of claim 1 wherein the boron doping concentration causes a local compressive strain.

4. The device of claim 1 wherein boron substitutes for nitrogen atoms within the thickness of Al y Ga 1-y N material.

5. The device of claim 1 wherein boron substitutes for either aluminum or gallium atoms within the thickness of Al y Ga 1-y N material.

6. The device of claim 1 wherein boron substitutes for both nitrogen atoms and aluminum and/or gallium atoms within the thickness of Al y Ga 1-y N material.

7. The device of claim 1 wherein boron occupies an interstitial within the thickness of Al y Ga 1-y N material.

8. The device of claim 1 wherein the boron does not form BN, BAlN, BGaN, or BAlGaN.

9. The device of claim 1 wherein the thickness of Al y Ga 1-y N material comprises an active region comprising a plurality of quantum wells.

10. The device of claim 1 further comprising a buffer region.

11. The device of claim 1 further comprising an AlGaN PN junction comprising a p-type layer and an n-type layer and an active region sandwiched between the p-type layer and the n-type layers.

12. The device of claim 1 further comprising a substrate member selected from sapphire, GaN, AlN, GaN on sapphire, AlN on sapphire, silicon, silicon carbide, and quartz.

13. The device of claim 1 wherein the aluminum concentration is between 1% and 80% and the boron doping concentration is between 1e16 and 1e18 atoms/centimeter3.

14. The device of claim 1 wherein the boron is an impurity within the thickness of Al y Ga 1-y N material.

15. The device of claim 1 wherein a light emitting efficiency of the thickness of Al y Ga 1-y N material is enhanced by introducing boron as a dopant to the thickness of Al y Ga 1-y N material.

16. The device of claim 1 , wherein light emitted from the thickness of Al y Ga 1-y N material is red-shifted by at least 10 nanometers by introducing boron as a dopant to the thickness of Al y Ga 1-y N material compared to a thickness of Al y Ga 1-y N material without boron which has the same aluminum concentration.

17. The device of claim 1 , wherein the thickness of Al y Ga 1-y N material is pumped by an external source comprising a light source or an electron source, the external source providing carriers into the thickness of AlGaN layer such that the thickness of Al y Ga 1-y N material emits light.

18. A light emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers, the device comprising: a p-type layer, an n-type layer, and quantum well disposed between the p-type layer and n-type layer; the quantum well comprising Al y Ga 1-y N material having aluminum composition greater than 0% and smaller than 100%; the Al y Ga 1-y N comprising a first portion with a boron concentration between 1e15 and 1e22 atoms/centimeter and a second portion with no boron, wherein: the first portion has a first band gap energy; the second portion has a second band gap energy; and the first band gap energy is within 0.5 eV of the second band gap energy.