Stacked planar double-gate lamellar field-effect transistor

1. A method of making a field-effect transistor device, comprising the steps of:

providing a substrate with a fin stack having a plurality of fins, including:

a first sacrificial material layer on the substrate,

a first semiconductive material layer on the first sacrificial material layer, and

a second sacrificial material layer on the first semiconductive material layer;

inserting a dummy gate having a second thickness, a dummy void, and an outer end that is coplanar to a second face of the fin stack;

inserting a first spacer having a first thickness and a first void, and having an outer end that is coplanar to a first face of the fin stack;

removing, at least partially, the first sacrificial material layer and the second sacrificial material layer by etching the first sacrificial material layer in a second plane and the second sacrificial material layer in a fourth plane;

removing the first spacer;

inserting a second spacer having the first thickness and a second void onto the first face such that the second spacer exposes and surrounds the first semiconductive material layer; depositing a source/drain region electrically coupled to the first semiconductive material layer on the first face;

removing the dummy gate, exposing a third face of the fin stack that is parallel to the first face; and

wherein the etching the first sacrificial material layer in the second plane and the second sacrificial material layer in the fourth plane is etched to a depth of the second thickness as measured from the second face to the third face, exposing the first semiconductive material layer; and

depositing a high-k dielectric layer on the third face, wherein the high-k dielectric layer surrounds the exposed first semiconductive material layer, except for an outer end of the exposed first semiconductive material layer.