3D high resolution X-ray sensor with integrated scintillator grid

1. An optical sensor, comprising:

a silicon wafer having a front side and a back side opposite the front side, the silicon wafer comprising an array of photodiodes each of which having a contact on the front side of the silicon wafer, the silicon wafer further comprising an array of grid holes on the back side thereof, each of the grid holes configured to receive an incident light and aligned with a respective photodiode of the array of photodiodes so that the respective photodiode receives the incident light after the incident light traverses through the respective grid hole;

a scintillator material filled in each of the grid holes, the scintillator material rendering total internal reflection of the incident light in each of the grid holes; and

one or more silicon dies with an array of photo-sensing circuits each of which having a contact at a top surface of the one or more silicon dies,

wherein the contact on each of the photodiodes is bonded to the contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies such that each of the photo-sensing circuits corresponds to a respective one of the photodiodes and a respective one of the grid holes filled with the scintillator material,

wherein the incident light in the grid holes on the back side of the silicon wafer is converted into electron-hole pairs by the photodiodes altering a voltage across the photodiode,

wherein the photo-sensing circuits of the one or more silicon dies sense the voltage through the contacts on the photodiodes and the contacts on the photo-sensing circuits of the one or more silicon dies,

wherein the silicon wafer comprises an oxide layer therein between the front side and the back side of the silicon wafer, and

wherein the array of grid holes extend from the back side of the silicon wafer toward the front side of the silicon wafer such that a height of the grid holes is greater than a depth of the oxide layer as measured from the back side of the silicon wafer such that the grid holes traverse through the oxide layer and part of a p-type region of the photodiodes.

2. The optical sensor of claim 1 , wherein the silicon wafer comprises a silicon-on-insulator (SOI) wafer.

3. The optical sensor of claim 2 , wherein PN diodes are formed below the insulator layer of the SOI wafer with impurities of n type or p type, and wherein the PN diodes are aligned to sidewalls of the grid holes.

4. The optical sensor of claim 3 , wherein the PN diodes are electrically connected to the contacts on the front side of the SOI wafer through multilevel metal interconnect.

5. The optical sensor of claim 3 , wherein light sensed by the PN diodes and charge proportional to exposed radiation on the back side of the SOI wafer appear at the contacts on the front side of the SOI wafer.

6. The optical sensor of claim 1 , wherein sidewalls of the grid holes are coated with a thin layer of oxide, a thin layer of nitride, a thin layer of silicon dioxide or metal, or a combination thereof.

7. The optical sensor of claim 6 , wherein the thin layer of metal comprises aluminum or chrome.

8. The optical sensor of claim 1 , wherein the grid holes are covered by an insulator, and wherein sidewalls of the grid holes are coated with an insulator stack with a dielectric constant such that light remains in the grid holes due to total internal reflection.

9. The optical sensor of claim 1 , wherein the contacts of the array of photodiodes on the silicon wafer have a first pitch, wherein the contacts of the array of photo-sensing circuits on the one or more silicon dies have a second pitch smaller than the first pitch, and wherein the contacts of the array of photodiodes on the silicon wafer and the contacts of the array of photo-sensing circuits on the one or more silicon dies are bonded together face to face with the first pitch reduced using multilevel metal interconnects.

10. A method of fabricating an optical sensor, comprising:

providing a silicon wafer having a front side and a back side opposite the front side, the silicon wafer comprising at least a silicon layer and an oxide layer disposed on the silicon layer;

forming, on the front side of the silicon wafer, an array of photodiodes each of which having a contact on the front of the silicon wafer;

forming, on the back side of the silicon wafer, an array of grid holes each of which configured to receive an incident light and aligned with a respective photodiode of the array of photodiodes so that the respective photodiode receives the incident light after the incident light traverses through the respective grid hole;

filling each of the grid holes with a scintillator material which renders total internal reflection of the incident light in each of the grid holes; and

forming, on one or more silicon dies, an array of photo-sensing circuits each of which having a contact at a top surface of the one or more silicon dies,

wherein the contact on each of the photodiodes is aligned and bonded to the contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies such that each of the photo-sensing circuits is aligned with a respective one of the photodiodes and a respective one of the grid holes,

wherein the incident light in the grid holes on the back side of the silicon wafer is converted into electron-hole pairs by the photodiodes altering a voltage across the photodiode,

wherein the photo-sensing circuits of the one or more silicon dies sense the voltage through the contacts on the photodiodes and the contacts on the photo-sensing circuits of the one or more silicon dies, and

wherein the array of grid holes extend from the back side of the silicon wafer toward the front side of the silicon wafer such that a height of the grid holes is greater than a depth of the oxide layer as measured from the back side of the silicon wafer such that the grid holes traverse through the oxide layer and part of a p-type region of the photodiodes.

11. The method of claim 10 , wherein the silicon wafer comprises a silicon-on-insulator (SOI) wafer.

12. The method of claim 11 , further comprising:

forming PN diodes below the oxide layer of the SOI wafer with impurities of n type or p type such that the PN diodes are aligned to sidewalls of the grid holes.

13. The method of claim 12 , wherein the PN diodes are electrically connected to the contacts on the front side of the SOI wafer through multilevel metal interconnect.

14. The method of claim 10 , wherein the scintillator material comprises cesium iodide (CsI).

15. The method of claim 10 , further comprising:

coating sidewalls of the grid holes with a thin layer of oxide, a thin layer of nitride, a thin layer of silicon dioxide or metal, or a combination thereof.

16. The method of claim 15 , wherein the thin layer of metal comprises aluminum or chrome.

17. The method of claim 10 , further comprising:

covering the grid holes with an insulator; and

coating sidewalls of the grid holes with an insulator stack with a dielectric constant such that light remains in the grid holes due to total internal reflection.

18. The method of claim 10 , further comprising:

scribing the silicon wafer in a square or rectangular shape by applying photoresist to form first and second tiles;

placing and aligning a mask to the contacts on the front side of the silicon wafer with a precision of less than 1 micron;

anisotropic or vertical plasma etching the silicon wafer with no undercut;

plasma etching the oxide layer and the silicon layer of the silicon wafer with no undercut;

placing the first tile next to the second tile with the first and second tiles butted against each other; and

placing a straight edge against the first and second tiles so that two corners of butting edges of the first and second tiles are aligned.