Light emitting diodes and associated methods of manufacturing
Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.
1. A light emitting diode (LED), comprising:
a substrate;
a semiconductor material carried by the substrate, the semiconductor material having—
a first major surface facing toward the substrate,
a second major surface opposite to the first major surface and further from the substrate than the first major surface,
indentations in a non-uniform arrangement at different respective crystal dislocations within the semiconductor material, wherein the indentations taper inwardly toward the substrate, and
a planar region extending between the indentations at the second major surface; and
an active region directly contacting the semiconductor material at the second major surface, wherein the active region conforms to the indentations.
2. The LED of claim 1 wherein:
a given one of the indentations has a hexagonal portion; and
the given indentation tapers inwardly from the hexagonal portion toward the substrate.
3. The LED of claim 1 wherein:
a given one of the indentations has sidewalls extending toward the substrate; and
the sidewalls extend along different respective crystal planes of the semiconductor material.
4. The LED of claim 1 wherein:
the semiconductor material contains an N-type gallium nitride (GaN) material;
the active region includes an indium gallium nitride (InGaN) material epitaxially formed on the semiconductor material; and
the LED further comprises a P-type GaN material epitaxially formed on the active region.
5. The LED of claim 1 wherein a given one of the indentations has six sidewalls that converge at an apex.
6. The LED of claim 1 wherein the indentations have a root-mean-square depth within a range from 0.05 micron to 3 microns.
7. The LED of claim 1 , further comprising a buffer material between the substrate and the semiconductor material.
8. A light emitting diode (LED), comprising:
a substrate;
a semiconductor material carried by the substrate, the semiconductor material having—
a first major surface facing toward the substrate,
a second major surface opposite to the first major surface and further from the substrate than the first major surface,
indentations aligned with a pattern of crystal dislocations within the semiconductor material, and
a planar region extending between the indentations at the second major surface; and
an active region directly contacting the semiconductor material at the second major surface, wherein the active region conforms to the indentations.
9. The LED of claim 8 wherein:
a given one of the indentations has a hexagonal portion; and
the given indentation tapers inwardly from the hexagonal portion toward the substrate.
10. The LED of claim 8 wherein:
a given one of the indentations has sidewalls extending toward the substrate; and
the sidewalls extend along different respective crystal planes of the semiconductor material.
11. The LED of claim 8 wherein a given one of the indentations has six sidewalls that converge at an apex.
12. The LED of claim 8 wherein the indentations have a root-mean-square depth within a range from 0.05 micron to 3 microns.
13. The LED of claim 8 , further comprising a buffer material between the substrate and the semiconductor material.