Passing access line structure in a memory device

1. A method for fabricating a memory device, the method comprising:

forming a plurality of continuous fins on a substrate;

forming an insulator material around the fins;

segmenting the continuous fins into segmented fins to form exposed areas between the segmented fins;

forming an insulator in the exposed areas wherein the insulator in the exposed areas is formed higher than the insulator material around the fins; and

forming a metal over the fins and the insulator material.

2. The method of claim 1 , wherein forming the insulator material comprises:

forming a nitride material over the plurality of fins; and

etching the nitride material to remove all but the nitride material between the plurality of fins.

3. The method of claim 1 , wherein segmenting the continuous fins into discontinuous fins comprises performing an active area chop (AC) operation.

4. The method of claim 1 , wherein the insulator material is a first insulator and further comprising forming a second insulator material in a saddle region between adjacent fins, wherein the first insulator material is different than the second insulator material.

5. The method of claim 4 , wherein the first insulator material is a nitride and the second insulator material is an oxide.

6. The method of claim 1 , wherein forming the insulator in the exposed areas comprises:

forming multilayer resist material over the fins adjacent to the exposed areas; and

performing an etch process on the exposed insulator and exposed fin sections;

filling the exposed areas between the multilayer resist material with the insulator; and

etching the insulator between the multilayer resist material such that the insulator in the exposed areas is reduced to a height of adjacent fins.

7. The method of claim 1 , wherein the forming the metal over the fins and insulator material comprises forming the metal to a shallower depth over the exposed areas than between adjacent fins not adjacent to the exposed areas.

8. The method of claim 1 , further comprising etching top portions of the plurality of fins to reduce a thickness of the top portion of the fins as compared to a bottom portion of the fins.

9. The method of claim 8 , wherein the top portion is that portion of the fin above the insulator around the fins.

10. A method for fabricating a memory device, the method comprising:

forming a plurality of continuous fins on a substrate;

forming a first insulator material over the fins;

etching the first insulator to a first height that is less than a fin height;

forming sections of an etch resist over adjacent pairs of the fins, the etch resist leaving exposed portions of the continuous fins, the adjacent pairs of fins separated by a saddle region;

performing an active chop process on the exposed portion to generate segmented fins separated by exposed areas;

forming a first insulator between the sections of the etch resist and into the exposed areas;

etching the first insulator to a second height;

forming a second insulator into the saddle regions; and

forming a metal over the fins and the insulator material.

11. The method of claim 10 , wherein the metal is formed to a shallower depth in the exposed areas than in other areas of the substrate.

12. The method of claim 10 , wherein the second height is greater than the first height.

13. The method of claim 10 , wherein the first insulator material is different from the second insulator material.