Light emitting device and electronic device having an embedded pixel electrode
An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.
1. A light emitting device comprising:
a first insulating layer;
a transistor comprising a semiconductor layer over the first insulating layer;
a conductive layer over the first insulating layer, the conductive layer electrically connected to the transistor;
a second insulating layer over the transistor, the second insulating layer comprising a first opening;
a wiring over the second insulating layer, the wiring electrically connected to the transistor through the first opening; and
a pixel electrode under the transistor,
wherein the first insulating layer comprises a second opening,
wherein the pixel electrode is electrically connected to the conductive layer through the second opening, and
wherein pixel electrode is embedded in the first insulating layer.
2. A light emitting device comprising:
a first insulating layer;
a transistor comprising a semiconductor layer over the first insulating layer;
a conductive layer over the first insulating layer, the conductive layer electrically connected to the transistor;
a second insulating layer over the transistor, the second insulating layer comprising a first opening;
a wiring over the second insulating layer, the wiring electrically connected to the transistor through the first opening;
a third insulating layer comprising nitride of silicon over the wiring; and
a pixel electrode under the transistor,
wherein the first insulating layer comprises a second opening,
wherein the pixel electrode is electrically connected to the conductive layer through the second opening, and
wherein pixel electrode is embedded in the first insulating layer.
3. A light emitting device comprising:
a first insulating layer;
a transistor comprising a semiconductor layer over the first insulating layer;
a conductive layer over the first insulating layer, the conductive layer electrically connected to the transistor; and
a pixel electrode under the transistor,
wherein the first insulating layer comprises an opening,
wherein the pixel electrode is electrically connected to the conductive layer through the opening,
wherein pixel electrode is embedded in the first insulating layer, and
wherein a portion of the pixel electrode is exposed from the first insulating layer.
4. The light emitting device according to claim 1 , wherein the semiconductor layer comprises an oxide semiconductor.
5. The light emitting device according to claim 2 , wherein the semiconductor layer comprises an oxide semiconductor.
6. The light emitting device according to claim 3 , wherein the semiconductor layer comprises an oxide semiconductor.
7. The light emitting device according to claim 1 , wherein the pixel electrode comprises a metal film and a conductive film having a light-transmitting property.
8. The light emitting device according to claim 2 , wherein the pixel electrode comprises a metal film and a conductive film having a light-transmitting property.
9. The light emitting device according to claim 3 , wherein the pixel electrode comprises a metal film and a conductive film having a light-transmitting property.