Material quality, suspended material structures on lattice-mismatched substrates
Suspended structures are provided using selective etch technology. Such structures can be protected on all sides when the selective undercut etch is performed, thereby providing excellent control of feature geometry combined with superior material quality.
1. A method for selectively etching a semiconductor structure, the method comprising:
providing a first region having a GeSn composition;
providing a second region having a Ge composition; and
selectively etching the second region while not etching the first region by exposing both regions to a fluorine-based isotropic dry etch;
wherein the fluorine-based isotropic dry etch uses CF 4 as an etchant.
2. The method of claim 1 , wherein the first region comprises Ge 0.92 Sn 0.08 .
3. A method of forming a suspended semiconductor structure, the method comprising:
providing a silicon substrate;
depositing a Ge buffer for lattice matching on the silicon substrate;
depositing a GeSn etch stop layer on the buffer;
depositing one or more device layers having a composition of Ge, SnGe, or SiSnGe on the etch stop layer;
selectively etching the buffer while not etching the etch stop layer by exposure to a CF 4 -based isotropic dry etch, whereby the device layers are at least partially suspended.
4. The method of claim 3 , further comprising:
forming features in the one or more device layers; and
protecting top and side surfaces of the features prior to selectively etching the buffer;
whereby 3-D protection of the features is provided during the exposure to the CF 4 -based isotropic dry etch.