IP Library Granted Patent US 9,786,510
Granted Patent B2
US 9,786,510 · App. 14/512,475 · Granted Oct 10, 2017

Fin-shaped structure and manufacturing method thereof

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Quick Facts
Patent No.
US 9,786,510
App. No.
14/512,475
Granted
Oct 10, 2017
Kind
B2
Abstract

A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.

Claims (7)

1. A fin-shaped structure, comprising: a substrate having a plurality of first fin-shaped structures and a plurality second fin-shaped structures, and the first fin-shaped structures comprising a first fin and a second fin, the second fin-shaped structures comprising a third fin and a fourth fin, wherein a first distance between adjacent top corners of the first fin and the second fin of the first fin-shaped structures is less than a second distance between adjacent top comers of the third fin and the fourth fin of the second fin-shaped structures while a third distance between adjacent lower parts of the first fin and the second fin is the same as a fourth distance between adjacent lower parts of the third fin and the fourth fin; and wherein the adjacent top corners are directly opposite each other.

2. The fin-shaped structure according to claim 1 , wherein the width of each top part of the first fin-shaped structures is larger than the width of each top part of the second fin-shaped structures.

3. The fin-shaped structure according to claim 1 , further comprising:

an isolation structure disposed beside the first fin-shaped structures and beside the second fin-shaped structures respectively, and ladder-shaped cross-sectional profile parts of the second fin-shaped structures are higher than a top surface of the isolation structure.

4. The fin-shaped structure according to claim 3 , wherein a top surface of the isolation structure of a first area is higher a top surface of the isolation structure of a second area.

5. The fin-shaped structure according to claim 1 , wherein a height of the first fin-shaped structures protruding from the isolation structure is lower than a height of the second fin-shaped structures protruding from the isolation structure.

6. The fin-shaped structure according to claim 1 , wherein a height of the first fin-shaped structures protruding from the substrate is higher than a height of the second fin-shaped structures protruding from the substrate.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2021
From: UNITED MICROELECTRONICS CORPORATION
To: MARLIN SEMICONDUCTOR LIMITED
Reel/Frame 056991/0292 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 13, 2014
From: SHEN, WEN-JIUN; FU, SSU-I; WU, YEN-LIANG; LIU, CHIA-JONG; HUNG, YU-HSIANG; CHANG, CHUNG-FU; LU, MAN-LING; CHEN, YI-WEI
To: UNITED MICROELECTRONICS CORP.
Reel/Frame 033934/0391 →