Vertical multi-junction light emitting diode
An embodiment of the invention comprises a first III-V semiconductor structure including a first light emitting layer disposed between a first n-type region and a first p-type region, and a second III-V semiconductor structure including a second light emitting layer disposed between a second n-type region and a second p-type region. A first contact is formed on a top surface of the first III-V semiconductor structure. A second contact is formed on a bottom surface of the second III-V semiconductor structure. A bonding structure is disposed between the first and second III-V semiconductor structures.
1. A light emitting diode structure comprising:
a first III-V semiconductor structure comprising a first light emitting layer disposed between a first n-type region and a first p-type region;
a second III-V semiconductor structure comprising a second light emitting layer disposed between a second n-type region and a second p-type region;
a first contact formed on a top surface of the first III-V semiconductor structure;
a second contact formed on a bottom surface of the second III-V semiconductor structure; and
a layer of nanoparticles disposed between the first and second III-V semiconductor structures, wherein the first and second III-V semiconductor structures are wafer bonded together using the layer of nanoparticles without any adhesive.
2. The light emitting diode structure of claim 1 , wherein
a first transparent conductive bonding layer is disposed between the first III-V semiconductor structure and the layer of nanoparticles, and wherein
a second transparent conductive bonding layer is disposed between the second III-V semiconductor structure and the layer of nanoparticles.
3. The light emitting diode structure of claim 2 ,
wherein the first transparent conductive bonding layer is annealed to the first III-V semiconductor structure.
4. The light emitting diode structure of claim 2 , wherein one of the first and second bonding layers comprises indium tin oxide.
5. The light emitting diode structure of claim 2 , wherein one of the first and second bonding layers comprises aluminum-doped zinc oxide.
6. The light emitting diode structure of claim 1 , wherein the nanoparticles are taken from the group consisting of: indium tin oxide nanoparticles, aluminum-doped zinc oxide nanoparticles and silver nanowires.
7. A method comprising:
wafer bonding a first III-V semiconductor structure to a second III-V semiconductor structure under elevated pressure using a nanoparticle layer sandwiched between the first and second III-V semiconductor structures, each of the first and second III-V semiconductor structures comprising a light emitting layer disposed between an n-type region and a p-type region;
forming a first contact on a top surface of the first III-V semiconductor structure; and
forming a second contact on a bottom surface of the second III-V semiconductor structure.
8. The method of claim 7 , further comprising:
bonding the first III-V semiconductor structure to a carrier; and
after said bonding the first III-V semiconductor structure to a carrier, removing a growth substrate from the first III-V semiconductor structure.
9. The method of claim 8 , further comprising:
after said wafer bonding the first III-V semiconductor structure to the second III-V semiconductor structure, removing a growth substrate from the second III-V semiconductor structure.
10. The method of claim 7 , wherein wafer bonding the first III-V semiconductor structure to the second III-V semiconductor structure comprises:
forming a first conductive bonding layer disposed in direct contact with the first III-V semiconductor structure;
forming a second conductive bonding layer disposed in direct contact with the second III-V semiconductor structure; and
pressing the first and second conductive bonding layers together.
11. The method of claim 10 , wherein one of the first conductive bonding layer and the second conductive bonding layer comprises indium tin oxide.
12. The method of claim 10 , wherein one of the first conductive bonding layer and the second conductive bonding layer comprises aluminum doped zinc oxide.
13. The method of claim 10 , wherein the wafer bonding is performed by pressing the first III-V semiconductor structure and the second III-V semiconductor structure together at a temperature of at least 400° C. but no more than 500° C.
14. The method of claim 7 , wherein the nanoparticle layer comprises nanowires.
15. The method of claim 7 , wherein the wafer bonding is performed without using any adhesive.
16. A light emitting diode structure comprising:
a first III-nitride semiconductor structure comprising a first light emitting layer disposed between a first n-type region and a first p-type region;
a second III-nitride semiconductor structure comprising a second light emitting layer disposed between a second n-type region and a second p-type region; and
a layer of nanoparticles disposed between the first and second III-nitride semiconductor structures, wherein the first III-nitride semiconductor structure is wafer bonded without any adhesive to the second III-nitride semiconductor structure with the layer of nanoparticles sandwiched between the first and second III-nitride semiconductor structures.
17. The light emitting diode structure of claim 16 , wherein the layer of nanoparticles comprises silver nanowires.
18. The light emitting diode structure of claim 16 , wherein the layer of nanoparticles comprises nanoparticles of indium tin oxide.
19. The light emitting diode structure of claim 16 , wherein the layer of nanoparticles is sandwiched between two transparent conductive oxide layers.
20. The light emitting diode structure of claim 19 , wherein one of the transparent conductive oxide layers is annealed to the first III-nitride semiconductor structure, and the other of the transparent conductive oxide layers is annealed to the second III-nitride semiconductor structure.