Two-step photoresist compositions and methods
The present disclosure relates to novel two-step photoresist compositions and processes. The processes involve removing acid-labile groups in step one and crosslinking the remaining material with themselves or added crosslinking systems in step two. The incorporation of a multistep pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution. The photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays. Dual functionality photosensitive compositions and methods are also disclosed.
1. A two-step negative-tone photoresist composition comprising:
a. At least one methanofullerene comprising the general formula:
wherein x is at least 10, y is 1-6, n is 0-1, alkyl is a branched or unbranched, substituted or unsubstituted divalent alkyl chain of 1-16 carbon atoms having no heteroatoms substituted into the alkyl chain, aryl is a substituted or unsubstituted divalent phenyl group, divalent heteroaromatic group, or divalent fused aromatic or fused heteroaromatic group, and wherein R is a photoacid labile group comprising —C═O—OR′, wherein OR′ is t-alkoxy, cycloketal, acetal, or oxy-vinyl
b. at least one crosslinking system, and
c. at least one photoacid generator,
wherein the photoacid labile group is capable of being removed when exposed to a photoacid providing a functionality capable of crosslinking with itself and/or the crosslinking system.
2. The photoresist composition of claim 1 , wherein the photoacid labile group comprises a tertiary alkoxycarbonyl group.
3. The photoresist composition of claim 1 , wherein the at least one photoacid generator comprises an onium salt compound, a triphenylsulfonium salt, a sulfone imide compound, a halogen-containing compound, a sulfone compound, a sulfonate ester compound, a quinone-diazide compound, a diazomethane compound, an iodonium salt, an oxime sulfonate, or a dicarboxyimidyl sulfate.
4. The photoresist composition of claim 1 , wherein the at least one crosslinking system comprises a photoacid sensitive monomer or polymer.
5. The photoresist composition of claim 1 , wherein the crosslinking system comprises at least one of a glycidyl ether, glycidyl ester, glycidyl amine, a methoxymethyl group, an ethoxy methyl group, a butoxymethyl group, a benzyloxymethyl group, dimethylamino methyl group, diethylamino methyl group, a dibutoxymethyl group, a dimethylol amino methyl group, diethylol amino methyl group, a dibutylol amino methyl group, a morpholino methyl group, acetoxymethyl group, benzyloxy methyl group, formyl group, acetyl group, vinyl group or an isopropenyl group.
6. The photoresist composition of claim 1 , wherein the crosslinking system comprises one or more glycidyl ether groups attached to a novolac resin.
7. The photoresist composition of claim 1 , wherein the divalent alkyl chain comprises a methylene, an ethylene, a 1,2-propylene or a 1,3-propylene, and wherein the divalent alkyl chain optionally comprises fluorine atoms.
8. A method of forming a patterned resist layer on a substrate comprising the steps of:
a. providing a substrate,
b. applying the photoresist composition of claim 1 to a desired wet thickness,
c. heating the coated substrate to form a substantially dried coating to obtain a desired thickness,
d. imagewise exposing the coated substrate to actinic radiation,
e. optionally heating the imagewise exposed coated substrate, and
f. removing the unexposed areas of the coating using an aqueous or nonaqueous developer composition to form a photoimage, wherein the remaining photoimage is optionally heated.
9. The method of claim 8 , wherein the photoacid labile group comprises a tertiary alkoxycarbonyl group.
10. The method of claim 8 , wherein the at least one photoacid generator comprises an onium salt compound, a triphenylsulfonium salt, a sulfone imide compound, a halogen-containing compound, a sulfone compound, a sulfonate ester compound, a quinone-diazide compound, a diazomethane compound, an iodonium salt, an oxime sulfonate, or a dicarboxyimidyl sulfate.
11. The method of claim 8 , wherein the at least one crosslinking system comprises a photoacid sensitive monomer or polymer.
12. The method of claim 8 , wherein the at least one crosslinking system comprises at least one of a glycidyl ether, glycidyl ester, glycidyl amine, a methoxymethyl group, an ethoxy methyl group, a butoxymethyl group, a benzyloxymethyl group, dimethylamino methyl group, diethylamino methyl group, a dibutoxymethyl group, a dimethylol amino methyl group, diethylol amino methyl group, a dibutylol amino methyl group, a morpholino methyl group, acetoxymethyl group, benzyloxy methyl group, formyl group, acetyl group, vinyl group or an isopropenyl group.
13. The method of claim 8 , wherein the at least one crosslinking system comprises one or more glycidyl ether groups attached to a novolac resin.
14. A method of forming a patterned resist layer on a substrate comprising the steps of:
a. providing a substrate,
b. applying the photoresist composition of claim 1 to a desired wet thickness,
c. heating the coated substrate to form a substantially dried coating to obtain a desired thickness,
d. imagewise exposing the coated substrate to actinic radiation,
e. optionally heating the imagewise exposed coated substrate, and
f. removing the exposed areas of the coating using an aqueous or nonaqueous developer composition to form a patterned image,
g. imagewise exposing the obtained patterned image,
h. optionally heating the imagewise exposed patterned image, and removing the unexposed areas of the image using an aqueous or nonaqueous developer composition to form an image;
wherein the remaining image is optionally heated.