Method for manufacturing finFET device
View Patent ↗A method for manufacturing a finFET device is provided. Firstly, a first multiple layer structure and a second multiple layer structure are formed on a substrate in sequence. Then, a first sacrificial pattern is formed on the second multiple layer structure. A first spacer is next formed on a sidewall of the first sacrificial pattern. Subsequently, a portion of the second multiple layer structure is etched so as to form a second sacrificial pattern by using the first spacer as a hard mask. Next, a second spacer is formed on a sidewall of the second sacrificial pattern. After that, the first multiple layer structure is patterned by using the second spacer as a hard mask. Finally, the substrate is etched so as to form at least a first fin structure by using the patterned first multiple layer structure as a hard mask.
1. A method for manufacturing a finFET device, comprising steps of:
forming a first multiple layer structure and a second multiple layer structure on a substrate in sequence;
forming a first sacrificial pattern on said second multiple layer structure;
forming a first spacer on a sidewall of said first sacrificial pattern;
removing said first sacrificial pattern;
etching a portion of said second multiple layer structure by using said first spacer as a hard mask, thereby forming a second sacrificial pattern;
forming a second spacer on a sidewall of said second sacrificial pattern;
removing said second sacrificial pattern;
patterning said first multiple layer structure by using said second spacer as a hard mask; and
etching a portion of said substrate by using said patterned first multiple layer structure as a hard mask, thereby forming at least one first fin structure.
2. The method according to claim 1 , wherein a first big mandrel is formed on said second multiple layer structure while said step of forming said first sacrificial pattern on said second multiple layer structure is performed, and the method further comprising steps of:
covering said first big mandrel before said step of removing said first sacrificial pattern; and
exposing said first big mandrel after said step of removing said first sacrificial pattern,
wherein said first big mandrel is removed while said step of etching said portion of said second multiple layer structure is performed.
3. The method according to claim 2 , wherein a first middle mandrel is formed on said second multiple layer structure while said step of forming said first sacrificial pattern on said second multiple layer structure is performed,
said first middle mandrel is covered while said step of covering said first big mandrel is performed,
said first middle mandrel is exposed while said step of exposing said first big mandrel is performed, and
said first middle mandrel is removed while said step of etching said portion of said second multiple layer structure.
4. The method according to claim 1 , wherein a second big mandrel is formed on said first multiple layer structure while said step of forming a second sacrificial pattern is performed, and the method further comprising steps of:
covering said second big mandrel before said step of removing said second sacrificial pattern; and
exposing said second big mandrel after said step of removing said second sacrificial pattern,
wherein said second big mandrel is removed and a monitor structure is formed while said step of forming said at least one first fin structure is performed.
5. The method according to claim 4 , wherein a second middle mandrel is formed on said first multiple layer structure while said step of forming a second sacrificial pattern is performed, and the method further comprising a step of:
patterning said second middle mandrel before said step of forming said second spacer,
wherein said patterned second middle mandrel is removed while said step of removing said second sacrificial pattern is performed,
wherein at least one second fin structure is formed while said step of forming said at least one first fin structure is performed.
6. The method according to claim 5 , wherein said at least one first fin structure has a width in a range of 10 nanometers to 15 nanometers, said at least one second fin structure has a width in a range of 10 nanometers to 15 nanometers, and said monitor structure has a width in a range of 45 nanometers to 80 nanometers.
7. The method according to claim 5 , wherein said at least one first fin structure is formed in a logic region, said at least one second fin structure is formed in a memory region, and said monitor structure is formed in a monitor region.
8. The method according to claim 1 , wherein any adjacent layers of said second multiple layer structure are made of different materials and a topmost layer thereof and said first spacer have different etching rates.
9. The method according to claim 1 , wherein any adjacent layers of said first multiple layer structure are made of different materials and a topmost layer thereof and said second spacer have different etching rates.
10. The method according to claim 1 , wherein said step of forming said first multiple layer structure comprises forming a nitride layer and an oxide layer on said substrate in sequence, and said step of forming said second spacer comprises:
forming another nitride layer on said oxide layer and said second sacrificial pattern conformally; and
etching back said another nitride layer.
11. The method according to claim 1 , wherein said step of forming said second multiple layer structure comprises forming a silicon layer and a nitride layer on said first multiple layer in sequence, and said step of forming said first spacer comprises:
forming an oxide layer on said nitride layer and said first sacrificial pattern conformally; and
etching back said oxide layer.
12. The method according to claim 1 , further comprising:
forming a shallow trench in said substrate;
filling an insulating material layer into said shallow trench; and
performing a planarization process to said insulating material layer.