Treatment for flowable dielectric deposition on substrate surfaces
Provided herein are methods and apparatus for improved flowable dielectric deposition on substrate surfaces. The methods involve improving nucleation and wetting on the substrate surface without forming a thick high wet etch rate interface layer. According to various embodiments, the methods may include single or multi-stage remote plasma treatments of a deposition surface. In some embodiments, a treatment may include exposure to both a reducing chemistry and a hydrogen-containing oxidizing chemistry. Apparatus for performing the methods are also provided.
1. A method comprising:
prior to flowable dielectric deposition on a substrate surface, performing a multi-step treatment, the multi-step treatment including a first operation of exposing the substrate surface to plasma species remotely generated from a hydrogen-containing reducing process gas to form Si—H terminated groups on the substrate surface and a second operation of exposing the Si—H terminated groups on the substrate surface to the plasma species remotely generated from a hydrogen-containing oxidizing process gas, wherein the second operation is performed after the first operation and the multi-step treatment results in a hydroxyl-terminated substrate surface.
2. The method of claim 1 , wherein the substrate temperature during the multi-step treatment is between about −20° C. and 300° C.
3. The method of claim 1 , wherein the substrate temperature during the multi-step treatment is between about −20° C. and 100° C.
4. The method of claim 1 , wherein the hydrogen-containing reducing processing gas includes one or more of hydrogen (H 2 ), ammonia (NH 3 ), and hydrazine (N 2 H 2 ).
5. The method of claim 4 , wherein the hydrogen-containing oxidizing process gas includes one or more of water (H 2 O) and hydrogen peroxide (H 2 O 2 ).
6. The method of claim 1 , wherein the hydrogen-containing oxidizing process gas includes a mixture of a hydrogen-containing compound and an oxygen-containing compound.
7. The method of claim 1 , wherein the hydrogen-containing oxidizing process gas includes a compound having one or more hydroxyl (—OH) groups.
8. The method of claim 1 , wherein the hydrogen-containing oxidizing process gas is a mixture of one or more of H 2 , NH 3 , N 2 H 2 with one or more of oxygen (O 2 ), ozone (O 3 ), H 2 O, H 2 O 2 , carbon dioxide (CO 2 ), and carbon monoxide (CO).
9. The method of claim 1 , wherein the primary reactive species in the first operation are hydrogen (H) radicals.
10. The method of claim 1 , wherein the hydrogen-containing reducing process gas includes substantially no oxygen.
11. The method of claim 1 , further comprising exposing the substrate surface to a silicon-containing vapor phase precursor and a co-reactant to thereby deposit a flowable dielectric film on the substrate surface.
12. The method of claim 11 , wherein the silicon-containing vapor phase precursor includes a silicon (Si)-carbon (C) bond.
13. The method of claim 11 , wherein the silicon-containing vapor phase precursor includes a silicon-alkyl bond.
14. The method of claim 11 , wherein the deposition occurs in the same chamber as the multi-step treatment.
15. The method of claim 11 , wherein the deposition occurs in a different chamber as the multi-step treatment.
16. The method of claim 15 , wherein the substrate is exposed to air between the multi-step treatment and the deposition.
17. The method of claim 1 , wherein multi-step treatment is performed without forming an oxide interface layer greater than 20 Å thick.
18. The method of claim 1 , wherein the substrate temperature during the multi-step treatment is between about −10° C. and 10° C.
19. A method comprising:
prior to flowable dielectric deposition on a substrate surface, performing a multi-step treatment, the multi-step treatment including a first operation of exposing the substrate surface to a reducing environment and a second operation of exposing the substrate surface to an oxidizing environment, wherein the multi-step treatment results in a hydroxyl-terminated substrate surface.
20. The method of claim 19 , wherein the substrate temperature during the multi-step treatment is between about −10° C. and 10° C.
21. The method of claim 19 , wherein the first operation forms Si—H terminated groups on the substrate surface and the second operation exposes the Si—H terminated groups to an oxidizing environment.