Phase change memory element

1. A phase-change memory, comprising:

a first electrode;

a second electrode;

an electrically-isolated conductor located between the first electrode and the second electrode; and

a phase-change material that contacts each of the first electrode, the second electrode, and the electrically-isolated conductor;

wherein the electrically-isolated conductor includes at least one of a thickness greater than a width of the phase-change material or a tapered end.

2. The phase-change memory of claim 1 , wherein the first electrode and the second electrode are coplanar.

3. The phase-change memory of claim 1 , wherein the second electrode is formed above the first electrode.

4. The phase-change memory of claim 1 , further comprising:

a transistor formed on the substrate, wherein a source or a drain of the transistor is electrically connected to the first electrode.

5. The phase-change memory of claim 4 , wherein at least a portion of the transistor is located below a surface of the substrate.

6. The phase-change memory of claim 5 , wherein the source or the drain is electrically connected to the first electrode via a metal plug formed in a hole on the surface of the substrate.

7. The phase-change memory of claim 1 , further comprising:

a diode formed on the substrate, wherein a terminal of the diode is electrically connected to the first electrode.

8. The phase-change memory of claim 1 , further comprising:

a complementary metal oxide semiconductor (CMOS) circuit formed on the substrate, wherein a terminal of the CMOS circuit is electrically connected to the first electrode.

9. The phase-change memory of claim 1 , wherein the electrically-isolated conductor comprises a plurality of electrically-isolated conductors.

10. The phase-change memory of claim 9 , wherein the electrically-isolated conductors of the plurality are separated by a dielectric layer.

11. The phase-change memory of claim 1 , wherein a memory cell corresponding to the electrically-isolated conductor comprises a multi-level memory cell.

12. The phase-change memory of claim 1 , wherein the phase change material comprises In, Ge, Sb, Te, Ga, Sn, or combinations thereof.

13. The phase-change memory of claim 1 , wherein the first electrode and the second electrode are independent and respectively comprise Al, W, Mo, Ti, TiN, TiAlN, TiW, or TaN.

14. The phase-change memory of claim 1 , wherein the electrically-isolated conductor comprises Al, W, Mo, Ti, TiN, TiAlN, TiW, or TaN.

15. The phase-change memory of claim 1 , wherein the first electrode and the second electrode are formed by the same process and made of the same material.

16. The phase-change memory of claim 1 , wherein the first electrode is electrically connected to an electrical element via a first metal plug.

17. The phase-change memory of claim 1 , wherein the second electrode is electrically connected to a bit line via a metal plug.

18. The phase-change memory of claim 1 , wherein the phase-change memory element comprises a pillar structure.

19. A phase-change memory, comprising:

a first electrode;

a second electrode;

an electrically-isolated conductor located between the first electrode and the second electrode; and

a phase-change material that contacts each of the first electrode, the second electrode, and the electrically-isolated conductor;

wherein the electrically-isolated conductor includes a thickness greater than a width of the phase-change material.

20. A phase-change memory, comprising:

a first electrode;

a second electrode;

an electrically-isolated conductor located between the first electrode and the second electrode; and

a phase-change material that contacts each of the first electrode, the second electrode, and the electrically-isolated conductor;

wherein the electrically-isolated conductor includes a pointed top.