Semiconductor device
In a first semiconductor chip, a first multilayer interconnect layer is formed on a first substrate, and a first inductor is formed in the first multilayer interconnect layer. In a second semiconductor chip, a second multilayer interconnect layer is formed on a second substrate. A second inductor is formed in the second multilayer interconnect layer. The first semiconductor chip and the second semiconductor chip overlap each other in a direction in which the first multilayer interconnect layer and the second multilayer interconnect layer face each other. In addition, the first inductor and the second inductor overlap each other when seen in a plan view. At least one end of a first insulating film does not overlap the end of a facing region, in a Y direction.
1. A semiconductor device comprising:
a first semiconductor chip that includes a first multilayer interconnect layer and a first inductor formed in the first multilayer interconnect layer;
a second semiconductor chip that includes a second multilayer interconnect layer and a second inductor formed in the second multilayer interconnect layer; and
a first insulating film that is located between the first semiconductor chip and the second semiconductor chip,
wherein the first semiconductor chip and the second semiconductor chip overlap each other in a direction in which the first multilayer interconnect layer and the second multilayer interconnect layer face each other,
the semiconductor device includes a facing region in which the first semiconductor chip and the second semiconductor chip overlap each other when seen in a plan view,
the first semiconductor chip includes a first non-facing region that does not face the second semiconductor chip,
the second semiconductor chip includes a second non-facing region that does not face the first semiconductor chip,
the first multilayer interconnect layer includes a first external connection terminal in the first non-facing region,
the second multilayer interconnect layer includes a second external connection terminal in the second non-facing region,
the first non-facing region, the facing region, and the second non-facing region are located in this order along a first direction, and
at least one end of the first insulating film does not overlap an end of the facing region in a second direction which is a direction perpendicular to the first direction when seen from a direction perpendicular to the first semiconductor chip.
2. The semiconductor device according to claim 1 , wherein both two ends of the first insulating film are located inside the facing region in the second direction.
3. The semiconductor device according to claim 1 , wherein both two ends of the first insulating film are located outside the facing region in the second direction when seen from a direction perpendicular to the semiconductor chip.
4. The semiconductor device according to claim 3 , wherein both the two ends of the first insulating film are located outside the first semiconductor chip and the second semiconductor chip in the second direction when seen from a direction perpendicular to the semiconductor chip.
5. The semiconductor device according to claim 4 , wherein a portion of the first insulating film which is located outside the first semiconductor chip and the second semiconductor chip in the second direction is bent in a direction facing a lateral side of the first semiconductor chip.
6. The semiconductor device according to claim 1 , wherein a width of the second semiconductor chip is smaller than a width of the first semiconductor chip, in the second direction.
7. The semiconductor device according to claim 1 , further comprising a second insulating film that is located between the first insulating film and the second semiconductor chip.
8. The semiconductor device according to claim 7 , further comprising a third insulating film that is located between the first insulating film and the second insulating film.
9. The semiconductor device according to claim 1 , wherein the first semiconductor chip is a semiconductor chip for power control, and
the second semiconductor chip is a controller chip that controls the first semiconductor chip.
10. A semiconductor device comprising:
a first semiconductor chip that includes a first multilayer interconnect layer and a first inductor formed in the first multilayer interconnect layer;
a second semiconductor chip that includes a second multilayer interconnect layer and a second inductor formed in the second multilayer interconnect layer; and
a first insulating film that is located between the first semiconductor chip and the second semiconductor chip,
wherein the first semiconductor chip and the second semiconductor chip overlap each other in a direction in which the first multilayer interconnect layer and the second multilayer interconnect layer face each other,
the semiconductor device includes a facing region in which the first inductor and the second inductor overlap each other when seen in a plan view;
the first semiconductor chip includes a first non-facing region that does not face the second semiconductor chip,
the second semiconductor chip includes a second non-facing region that does not face the first semiconductor chip,
the first multilayer interconnect layer includes a first external connection terminal in the first non-facing region,
the second multilayer interconnect layer includes a second external connection terminal in the second non-facing region,
the first non-facing region, the facing region, and the second non-facing region are disposed along a first direction,
one end of the first insulating film is located outside the first semiconductor chip and inside the second semiconductor chip in the first direction when seen from a direction perpendicular to the first semiconductor chip, and
the one end of the first insulating film is bent toward a lateral side of the first semiconductor chip.
11. The semiconductor device according to claim 10 , further comprising a second insulating film that is located between the first insulating film and the second semiconductor chip.
12. The semiconductor device according to claim 11 , further comprising a third insulating film that is located between the first insulating film and the second semiconductor chip.