Flip-flop, latch, and mux cells for use in a standard cell library and integrated circuits made therefrom
View Patent ↗Improved 14 nm cells, as depicted in FIGS. 1 - 53 , realize reduced pattern complexity, high yield, high performance, and improved compactness (one poly-stripe smaller than existing designs for the disclosed cells). The invention relates to ICs made using these cells (or topologically equivalent variants thereof), as well as processes for makings such ICs using said cells (or their variants).
1. An integrated circuit, comprising at least one scan-enabled d-flip-flop, fabricated using a commercially available 14 nm process that includes at least metal-1, metal-2 and poly layers, the metal-1 and metal-2 layers of said d-flip-flop including:
horizontally-extending power rails in metal-1;
uni-directional horizontal patterning in metal-2;
an h-shaped feature in metal-1; and,
plural c-shaped features in metal-1;
the poly layer of said d-flip-flop consisting only of:
twenty-six vertically-oriented poly stripes, each spaced at a minimum Contacted Poly Pitch (CPP), with the at least the two outermost poly stripes completely covered by a cut mask.
2. An integrated circuit, as defined in claim 1 , wherein in said poly layer of said d-flip-flop, the third-from-the-right, sixth-from-the-right, and eighth-from-the-right poly stripes are also completely covered by a cut mask.
3. An integrated circuit, as defined in claim 1 , wherein in said metal-1 layer of said d-flip-flop, at least one of said c-shaped features is right-facing and another of said c-shaped features is left-facing.
4. An integrated circuit, as defined in claim 1 , wherein said d-flip-flop includes a reset.
5. An integrated circuit, as defined in claim 1 , wherein said d-flip-flop includes an inverted output.
6. An integrated circuit, comprising at least one latch, fabricated using a commercially available 14 nm process that includes at least metal-1, metal-2 and poly layers, the metal-1 and metal-2 layers of said latch including:
horizontally-extending power rails in metal-1;
uni-directional horizontal patterning in metal-2;
an h-shaped feature in metal-1; and,
at least one c-shaped feature in metal-1;
and the poly layer of said latch consisting only of:
ten vertically-oriented poly stripes, each spaced at a minimum Contacted Poly Pitch (CPP), with the at least the two outermost poly stripes completely covered by a cut mask.
7. An integrated circuit, as defined in claim 6 , wherein in said poly layer of said latch, the second-from-the-rightmost poly stripe is also completely covered by a cut mask.
8. An integrated circuit, as defined in claim 6 , wherein in said metal-1 layer of said latch, at least one of said c-shaped features is left-facing.
9. An integrated circuit, as defined in claim 6 , wherein said latch includes an inverted output.
10. An integrated circuit, comprising at least one two-input tri-state multiplexor, fabricated using a commercially available 14 nm process that includes at least metal-1, metal-2 and poly layers, the metal-1 and metal-2 layers of said multiplexor including:
horizontally-extending power rails in metal-1;
uni-directional horizontal patterning in metal-2;
an h-shaped feature in metal-1; and,
at least one c-shaped feature in metal-1;
and the poly layer of said latch consisting only of:
seven vertically-oriented poly stripes, each spaced at a minimum Contacted Poly Pitch (CPP), with the at least the two outermost poly stripes completely covered by a cut mask.