Method of fabricating low CTE interposer without TSV structure

1. A method of fabricating a microelectronic assembly, comprising:

forming an encapsulant filling spaces between adjacent ones of electrically conductive elements projecting upwardly above a second surface of a dielectric region, the second surface opposite from a first surface of the dielectric region which faces and is supported on a supporting structure, wherein a plurality of traces electrically connected with the conductive elements and extend in at least one direction parallel to the second surface, the encapsulant having a surface overlying and facing away from the second surface, wherein ends of the conductive elements are at the surface of the encapsulant;

and then removing at least a portion of the thickness of the supporting structure in a direction towards the first surface of the dielectric region, wherein a plurality of contacts are at the first surface of the dielectric region, the contacts electrically coupled with the conductive elements;

and then assembling a microelectronic element having a face and a plurality of element contacts at the face, the assembling performed such that the element contacts face and are joined to the plurality of contacts at the first surface of the dielectric region, thereby electrically interconnecting the element contacts with the contacts at the first surface of the dielectric region,

wherein the encapsulant has a coefficient of thermal expansion (CTE) no greater than twice a CTE associated with at least one of the dielectric region or the microelectronic element.

2. The method of claim 1 , further comprising:

after assembling the microelectronic element removing a portion of the encapsulant at the surface of the encapsulant, thereby removing portions of the conductive elements at the surface of the encapsulant.

3. The method of claim 1 , further comprising:

after removing the portion of the encapsulant, attaching a plurality of joining elements to the portions of the conductive elements at the surface, the joining elements configured to be joined with a plurality of contacts at a surface of a second component.

4. The method of claim 1 , further comprising:

after assembling the microelectronic element with the dielectric region, abrading the microelectronic element at a surface of the microelectronic element opposite from the first surface of the dielectric region, so as to remove at least a portion of a thickness of the microelectronic element.

5. The method of claim 1 , wherein the microelectronic element comprises a plurality of microelectronic elements spaced apart from one another in the at least one direction parallel to the surface of the dielectric region.

6. The method of claim 1 , further comprising:

joining the plurality of electrically conductive elements with corresponding contacts at a surface of a circuit panel.

7. The method of claim 1 , wherein the supporting structure and the dielectric region are integrally formed.

8. The method of claim 1 , wherein the supporting structure consists essentially of a first material and the dielectric region consists essentially of a second material.

9. The method of claim 1 , wherein a process stop layer is disposed between the dielectric region and the supporting structure, and

wherein the removing at least a portion of the supporting structure includes stopping the removing at the process stop layer by utilizing a difference between the supporting structure and the process stop layer.

10. The method of claim 1 , wherein the plurality of electrically conductive elements includes at least one mass of bonding material selected from the group consisting of solder, tin, indium, copper, nickel, gold, eutectic compositions, non-eutectic compositions, and an electrically conductive matrix material.

11. The method of claim 1 , wherein the plurality of electrically conductive elements includes a plurality of metal posts having at least a core consisting essentially of at least one metal selected from copper, copper alloy, nickel and nickel alloy, the posts having a melting temperature higher than 300° C.

12. The method of claim 1 , wherein the dielectric region is selected from a group consisting of a Back End of Line layer (BEOL) and a redistribution layer (RDL).

13. The method of claim 1 , wherein the dielectric region is a Back End of Line layer (BEOL).

14. A method of fabricating a microelectronic assembly, comprising:

forming an encapsulant filling spaces between adjacent ones of electrically conductive elements projecting upwardly above a second surface of a dielectric region, the second surface opposite from a first surface of the dielectric region which faces a supporting structure, wherein a plurality of traces electrically connected with the conductive elements extend in at least one direction parallel to the second surface, the encapsulant having a surface overlying and facing away from the second surface, wherein ends of the conductive elements are at the surface of the encapsulant;

removing at least a portion of the thickness of the supporting structure in a direction towards the first surface of the dielectric region;

assembling a microelectronic element having a face and a plurality of element contacts at the face such that the element contacts face and are joined to a plurality of contacts at the first surface,

wherein the encapsulant has a coefficient of thermal expansion (CTE) no greater than twice a CTE associated with at least one of the dielectric region or the microelectronic element, wherein the encapsulant is a first encapsulant, the method further comprising forming a second encapsulant, the second encapsulant extending above the first surface, the second encapsulant having a CTE equal to a CTE of the first encapsulant.

15. A method of fabricating a microelectronic assembly, comprising:

forming an encapsulant on a surface of a dielectric region, the dielectric region supported on a supporting structure opposite from the surface, wherein a plurality of electrically conductive elements project above the surface and a plurality of traces supported by the dielectric region are electrically connected with the conductive elements and extend in at least one direction parallel to the surface;

and then removing all or part of a thickness of the supporting structure, wherein after the removing a plurality of contacts are at a surface opposite from the surface of the encapsulant, the contacts electrically coupled with the conductive elements;

and then assembling a microelectronic element having a face and a plurality of element contacts at the face, the assembling performed such that the element contacts face and are joined to the plurality of contacts at the surface opposite from the surface of the encapsulant, thereby electrically interconnecting the element contacts with the plurality of contacts,

wherein the encapsulant has a coefficient of thermal expansion (CTE) no greater than twice a CTE associated with at least one of the dielectric region or the microelectronic element and ends of the conductive elements are at the surface of the encapsulant.

16. The method of claim 15 , further comprising:

after assembling the microelectronic element with the dielectric region, abrading the microelectronic element at a surface of the microelectronic element opposite from the first surface of the dielectric region, so as to remove at least a portion of a thickness of the microelectronic element.

17. The method of claim 15 , wherein the microelectronic element comprises a plurality of microelectronic elements spaced apart from one another in the at least one direction parallel to the surface of the dielectric region.

18. The method of claim 15 , wherein the plurality of electrically conductive elements includes at least one mass of bonding material selected from the group consisting of solder, tin, indium, copper, nickel, gold, eutectic compositions, non-eutectic compositions, and an electrically conductive matrix material.

19. The method of claim 15 , wherein the plurality of electrically conductive elements includes a plurality of metal posts having at least a core consisting essentially of at least one metal selected from copper, copper alloy, nickel and nickel alloy, the posts having a melting temperature higher than 300° C.