Acoustic resonator comprising acoustic redistribution layers and lateral features

1. An acoustic resonator device, comprising:

a piezoelectric layer;

a first electrode disposed adjacent to a first surface of the piezoelectric layer;

a second electrode disposed adjacent to a second surface of the piezoelectric layer, at least one of the first electrode and the second electrode comprising a first conductive layer disposed adjacent to the piezoelectric layer and having a first acoustic impedance, and a second conductive layer disposed on a side of the first conductive layer opposite the piezoelectric layer and having a second acoustic impedance greater than the first acoustic impedance; and

at least one lateral feature for increasing quality factor Q of the acoustic resonator device, the at least one lateral feature comprising at least one of:

an air-ring between the piezoelectric layer and the second electrode; and

a frame on at least one of the first electrode and the piezoelectric layer.

2. The acoustic resonator device of claim 1 , wherein the air-ring defines an outside boundary of a main membrane region of the acoustic resonator device.

3. The acoustic resonator device of claim 2 , wherein the frame has an inner edge defining a boundary of an active region formed within the main membrane region of the acoustic resonator device.

4. The acoustic resonator device of claim 3 , further comprising a substrate, wherein the first electrode is disposed between the substrate and the piezoelectric layer.

5. The acoustic resonator device of claim 3 , wherein each of the first electrode and the second electrode comprises a first conductive layer disposed adjacent to the piezoelectric layer and having the first acoustic impedance, and the second conductive layer disposed on the side of the first conductive layer opposite the piezoelectric layer and having the second acoustic impedance.

6. The acoustic resonator device of claim 5 , wherein the first conductive layer is formed of a first material, and the second conductive layer is formed of a second material.

7. The acoustic resonator device of claim 6 , wherein the first material is one of molybdenum, niobium, or an alloy of niobium and molybdenum, and the second material is one of tungsten or iridium.

8. The acoustic resonator device of claim 1 , wherein the piezoelectric layer comprises aluminum scandium nitride having less than about 10 percent scandium replacing aluminum in standard aluminum nitride (AlN).

9. An acoustic resonator device, comprising:

a bottom electrode disposed over a substrate on an acoustic reflecting feature;

a piezoelectric layer disposed on the bottom electrode;

a top electrode disposed on the piezoelectric layer;

an air-ring formed between the piezoelectric layer and the top electrode, the air-ring defining an outside boundary of a main membrane region; and

a first frame formed between the piezoelectric layer and the top electrode,

wherein at least one of the bottom electrode and the top electrode comprises a first conductive layer disposed adjacent to the piezoelectric layer and having a first acoustic impedance, and a second conductive layer disposed adjacent the first conductive layer and having a second acoustic impedance greater than the first acoustic impedance.

10. The acoustic resonator device of claim 9 , wherein the first frame has an inner edge defining a boundary of an active region formed within the main membrane region.

11. The acoustic resonator device of claim 9 , wherein the at least one of the bottom electrode and the top electrode further comprises a third conductive layer disposed adjacent the second conductive layer.

12. The acoustic resonator device of claim 11 , wherein the third conductive layer has a third acoustic impedance greater than the first acoustic impedance.

13. The acoustic resonator device of claim 11 , wherein the third conductive layer has a third acoustic impedance less than the first acoustic impedance.

14. The acoustic resonator device of claim 11 , wherein the third conductive layer has a third acoustic impedance the same as the first acoustic impedance.

15. The acoustic resonator device of claim 9 , wherein the acoustic reflecting feature comprises an air cavity formed in the substrate.

16. The acoustic resonator device of claim 9 , wherein the acoustic reflecting feature comprises a distributed Bragg reflector formed between the substrate and the bottom electrode.

17. The acoustic resonator device of claim 9 , further comprising:

a second frame formed between the bottom electrode and the piezoelectric layer, or formed between the substrate and the bottom electrode.

18. The acoustic resonator device of claim 17 , wherein the second frame has an inner edge defining a boundary of an active region formed within the main membrane region, the inner edge of the second frame extending further into the main membrane region than an inner edge of the first frame.

19. The acoustic resonator device of claim 17 , wherein the first frame has an inner edge defining a boundary of an active region formed within the main membrane region, the inner edge of the first frame extending further into the main membrane region than an inner edge of the second frame.

20. An bulk acoustic wave (BAW) resonator, comprising:

a substrate;

a bottom electrode disposed over the substrate on an acoustic reflecting feature;

a piezoelectric layer disposed on the bottom electrode;

a top electrode disposed on the piezoelectric layer;

an air-ring defining an outside boundary of a main membrane region; and

a frame formed on at least one of the piezoelectric layer, the bottom electrode and the substrate,

wherein at least one of the bottom electrode and the top electrode comprises a plurality of conductive layers having different acoustic impedances, respectively, the lowest acoustic impedance being adjacent to the piezoelectric layer; and wherein the acoustic reflecting feature is one of an air-cavity or an acoustic mirror.