Hall effect sensor device

1. A Hall effect sensor device implemented on a semiconductor body, the Hall effect sensor device comprising:

a first Hall effect sensor; and

a second Hall effect sensor, the first and second Hall effect sensor each having at least four individual Hall effect elements connected in series, each of the at least four individual Hall effect elements having three contact terminals arranged in a row,

wherein a middle contact terminal is arranged between and directly next to the two outer contact terminals,

wherein the series connection of the at least four individual Hall effect elements is implemented through an interconnection of the two outer contact terminals of each individual Hall effect element,

wherein a start and an end of the series connection are linked together,

wherein the Hall effect elements are each implemented in a semiconductor well region of a first conductivity type,

wherein the semiconductor well regions of the individual Hall effect elements are separated from one another, and

wherein the first Hall effect sensor and the second Hall effect sensor are connected in parallel in that a middle contact terminal of a Hall effect element of the first Hall effect sensor is connected in each case with a middle contact terminal of a Hall effect element of the second Hall effect sensor and a Hall contact is associated with each of the connected middle contact terminals and either a supply voltage can be applied or a Hall voltage can be picked off at the Hall contacts.

2. The Hall effect sensor device according to claim 1 , wherein two of the middle contact terminals of the Hall effect elements are designed as Hall voltage pickoffs and two of the middle contact terminals of the Hall effect elements are designed as supply voltage contacts.

3. The Hall effect sensor device according to claim 1 , wherein the Hall effect elements have an identical cross-sectional structure along the longitudinal extent of the Hall effect elements, wherein the longitudinal extent is parallel to the three contact terminals that are arranged in a row.

4. The Hall effect sensor device according to claim 1 , wherein the Hall effect elements of the first Hall effect sensor and the Hall effect elements of the second Hall effect sensor have an axis of symmetry located between the two Hall effect sensors, and wherein two of the Hall effect elements of every Hall effect sensor have equal spacing from the axis of symmetry.

5. The Hall effect sensor device according to claim 1 , wherein the first Hall effect sensor has exactly the same number of Hall effect elements as the second Hall effect sensor.

6. The Hall effect sensor device according to claim 1 , wherein only the middle contact terminals are connected to one another between the first Hall effect sensor and the second Hall effect sensor in each case.

7. The Hall effect sensor device according to claim 1 , wherein the Hall effect elements are each implemented as vertical Hall effect elements.

8. The Hall effect sensor device according to claim 1 , wherein an integrated circuit is implemented on the semiconductor body, and the integrated circuit is in electrical connection with the first Hall effect sensor and the second Hall effect sensor.

9. The Hall effect sensor device according to claim 1 , wherein each Hall effect sensor has more than four Hall effect elements.

10. The Hall effect sensor device according to claim 1 , wherein all Hall effect elements of at least one of the Hall effect sensors have equal spacing from the axis of symmetry.

11. The Hall effect sensor device according to claim 1 , wherein a third Hall effect sensor and a fourth Hall effect sensor are implemented on the semiconductor body, and wherein the four Hall effect sensors are electrical connection with one another.

12. The Hall effect sensor device according to claim 1 , wherein the semiconductor body is located in a single, common housing with the Hall effect sensors.