Oxide etch selectivity enhancement
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor in combination with an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor or an alcohol. The combination react with the patterned heterogeneous structures to remove an exposed silicon oxide portion faster than an exposed silicon nitride portion. The inclusion of the oxygen-containing precursor may suppress the silicon nitride etch rate and result in unprecedented silicon oxide etch selectivity.
1. A method of etching a patterned substrate, the method comprising:
placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises an exposed silicon oxide portion and an exposed silicon nitride portion;
flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents;
flowing a hydrogen-and-oxygen-containing precursor into the substrate processing region without first passing the hydrogen-and-oxygen-containing precursor through the remote plasma region, wherein the hydrogen-and-oxygen-containing precursor comprises an O—H bond; and
etching the exposed silicon oxide portion by flowing the plasma effluents into the substrate processing region, wherein the exposed silicon oxide portion etches at a first etch rate and the exposed silicon nitride portion etches at a second etch rate which is lower than the first etch rate.
2. The method of claim 1 wherein the first etch rate exceeds the second etch rate by a factor of about 80 or more.
3. The method of claim 1 wherein the substrate processing region is plasma-free during the operation of etching the exposed silicon oxide portion.
4. The method of claim 1 wherein the hydrogen-and-oxygen-containing precursor is not excited by any plasma outside the substrate processing region prior to entering the substrate processing region.
5. The method of claim 1 wherein the fluorine-containing precursor comprises a precursor selected from the group consisting of atomic fluorine, diatomic fluorine, nitrogen trifluoride, carbon tetrafluoride, hydrogen fluoride and xenon difluoride.
6. The method of claim 1 wherein the remote plasma region, the substrate processing region, the fluorine-containing precursor, the oxygen-containing precursor and the plasma effluents are essentially devoid of hydrogen during the operation of etching the exposed silicon oxide portion.
7. The method of claim 1 wherein the fluorine-containing precursor and the oxygen-containing precursor flow through through-holes in a dual-zone showerhead and the hydrogen-and-oxygen-containing precursor passes through separate zones in the dual-zone showerhead, wherein the separate zones open into the substrate processing region but not directly into the remote plasma region.
8. The method of claim 1 wherein the hydrogen-and-oxygen-containing precursor comprises one of water vapor or an alcohol.
9. The method of claim 1 wherein the oxygen-containing precursor comprises one or more of O 2 , O 3 , N 2 O, NO 2 and N 2 O 2 .
10. A method of etching a patterned substrate, the method comprising:
placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises an exposed silicon oxide portion and an exposed silicon nitride portion;
flowing nitrogen trifluoride and molecular oxygen into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents;
combining the plasma effluents with water vapor in the substrate processing region; and
etching the exposed silicon oxide portion with the combination of the plasma effluents and the water vapor, wherein the exposed silicon oxide portion etches at a first etch rate and the exposed silicon nitride portion etches at a second etch rate which is lower than the first etch rate.
11. The method of claim 10 wherein the water vapor is flowed into the remote plasma region without first passing through the remote plasma region.
12. The method of claim 10 wherein the first etch rate exceeds the second etch rate by a factor of about 120 or more.