Method and apparatus for bitcell modeling
A methodology for the simulation of semiconductor memory devices that exhibits improved accuracy and speed, and the apparatus performing the methodology are disclosed. Embodiments may include determining a state of a bitcell of an integrated circuit (IC) design, determining a first threshold voltage for the bitcell based on the state of the bitcell, and simulating electrical characteristics of the bitcell according to the first threshold voltage to verify the IC design.
1. An apparatus comprising:
at least one processor; and
at least one memory including computer program code for one or more programs, the at least one memory and the computer program code configured to, with the at least one processor, cause the apparatus to:
determine a state of a bitcell of an integrated circuit (IC) design;
determine a first threshold voltage for the bitcell based on bias voltages of the bitcell corresponding to the state of the bitcell, wherein a determination is simultaneously made as to whether the bias voltages satisfy corresponding threshold values;
simulate electrical characteristics of the bitcell according to the first threshold voltage to verify the IC design;
cause the simulation to modify the state of the bitcell after simulation of the electrical characteristics of the bitcell according to the first threshold voltage;
determine a second threshold voltage for the bitcell based on the modification of the state of the bitcell; and
simulate electrical characteristics of the bitcell according to the second threshold voltage to verify the IC design, wherein:
the bias voltages correspond to pin voltages of the bitcell selected from bitline (BL), wordline (WL), control gate (CG), array ground (AG), and substrate (SUB),
when WL>15V, CG>14V, AG<0.1V, and SUB<0.1V, then the bitcell is determined to be in an erased state,
when WL>15V, CG<0.1V, BL>11V, and SUB<0.1V, then the bitcell is determined to be in a programmed state, and
when BL>0.1V, CG>0.7V, SUB<0.1V, and WL>2.5V, then the bitcell is determined to be readout by access to cell source-drain current.
2. The apparatus of claim 1 , wherein the bias voltages of the bitcell correspond to pin voltages of the bitcell.
3. The apparatus of claim 1 , wherein the apparatus is configured to verify the state of the bitcell based on an expected bitcell value corresponding to a write or an erase operation.
4. The apparatus of claim 1 , wherein the apparatus is further configured to:
simulate the electrical characteristics of the bitcell and one or more other bitcells in parallel.
5. A computer-implemented method comprising:
determining, by a processor, a state of a bitcell of an integrated circuit (IC) design;
determining a first threshold voltage for the bitcell based on bias voltages of the bitcell corresponding to the state of the bitcell, wherein a determination is simultaneously made as to whether the bias voltages satisfy corresponding threshold values;
simulating electrical characteristics of the bitcell according to the first threshold voltage to verify the IC design;
causing the simulation to modify the state of the bitcell after the simulation of the electrical characteristics of the bitcell according to the first threshold voltage;
determining a second threshold voltage for the bitcell based on the modification of the state of the bitcell; and
simulating electrical characteristics of the bitcell according to the second threshold voltage to verify the IC design, wherein:
the bias voltages correspond to pin voltages of the bitcell selected from bitline (BL), wordline (WL), control gate (CG), array ground (AG), and substrate (SUB),
when WL>15V, CG>14V, AG<0.1V, and SUB<0.1V, then the bitcell is determined to be in an erased state,
when WL>15V, CG<0.1V, BL>11V, and SUB<0.1V, then the bitcell is determined to be in a programmed state, and
when BL>0.1V, CG>0.7V, SUB<0.1V, and WL>2.5V, then the bitcell is determined to be readout by access to cell source-drain current.
6. The method of claim 5 , wherein the first threshold voltage is determined if the one or more bias voltages satisfy one or more corresponding bias threshold values.
7. The method of claim 5 , further comprising:
simulating the electrical characteristics of the bitcell and one or more other bitcells in parallel.