Intermetallic compound layer on a pillar between a chip and substrate
A semiconductor package includes a wiring substrate that includes a first conductive member; a semiconductor chip that is mounted on the wiring substrate and includes a second conductive member, the first conductive member and the second conductive member being positioned to face each other; and a bonding member that bonds and electrically connects the first conductive member and the second conductive member, at least one of the first conductive member and the second conductive member being a pillar-shaped terminal, the bonding member being bonded to an end surface of the pillar-shaped terminal and a portion of a side surface of the pillar-shaped terminal, an intermetallic compound layer being formed at an interface of the bonding member and the pillar-shaped terminal.
1. A semiconductor package comprising:
a wiring substrate that includes a first conductive member;
a semiconductor chip that is mounted on the wiring substrate and includes a second conductive member,
the first conductive member and the second conductive member being positioned to face each other; and
a bonding member that bonds and electrically connects the first conductive member and the second conductive member,
at least one of the first conductive member and the second conductive member being a pillar-shaped terminal,
the bonding member being bonded to an end surface of the pillar-shaped terminal and a partial portion of a side surface of the pillar-shaped terminal,
an intermetallic compound layer of a first material composing the bonding member and a second material composing the pillar-shaped terminal being formed at an interface of the bonding member and the pillar-shaped terminal at the end surface of the pillar-shaped terminal and the partial portion of the side surface of the pillar-shaped terminal,
wherein the intermetallic compound layer does not cover the entirety of the side surface of the pillar-shaped terminal.
2. The semiconductor package according to claim 1 ,
wherein the first conductive member is a pad and the second conductive member is the pillar-shaped terminal, and
wherein the bonding member bonds an end surface of the pillar-shaped terminal at a pad side, a partial portion of a side surface of the pillar-shaped terminal, and an end surface of the pad at a pillar-shaped terminal side.
3. The semiconductor package according to claim 2 ,
wherein the intermetallic compound layer is formed at the entirety of the interface of the bonding member and the pillar-shaped terminal.
4. The semiconductor package according to claim 1 , further comprising:
an oxide film formed at another partial portion of the side surface of the pillar-shaped terminal at which the bonding member is not bonded.
5. The semiconductor package according to claim 1 ,
wherein the pillar-shaped terminal is made of copper or copper alloy,
wherein the bonding member includes tin, and
wherein the intermetallic compound layer is made of an intermetallic compound of copper and tin.
6. The semiconductor package according to claim 1 ,
wherein the first conductive member is a first pillar-shaped terminal and the second conductive member is a second pillar-shaped terminal,
wherein the bonding member bonds an end surface of the first pillar-shaped terminal at a second pillar-shaped terminal side, an end surface of the second pillar-shaped terminal at a first pillar-shaped terminal side, and at least one of a partial portion of a side surface of the first pillar-shaped terminal and a partial portion of a side surface of the second pillar-shaped terminal, and
wherein intermetallic compound layers are formed at an interface of the bonding member and the first pillar-shaped terminal and an interface of the bonding member and the second pillar-shaped terminal, respectively.
7. The semiconductor package according to claim 6 ,
wherein the intermetallic compound layer is formed at the entirety of the interface of the bonding member and the pillar-shaped terminal.
8. The semiconductor package according to claim 1 ,
wherein the intermetallic compound layer is formed at the entirety of the interface of the bonding member and the pillar-shaped terminal.
9. The semiconductor package according to claim 1 ,
wherein the intermetallic compound layer includes a first intermetallic compound layer and a second intermetallic compound layer whose composition is different from the composition of the first intermetallic compound layer.