Light emitting structure having electrodes forming a concave surface and manufacturing method thereof
View Patent ↗A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located.
1. A light-emitting structure, comprising:
a semiconductor light-emitting element comprising a sidewall, a first connection point, and a second connection point;
a glue layer covering the sidewall;
a first electrode electrically connected to the first connection point, and comprising a portion with a curved surface, a beveled surface, or a combination thereof; and
a second electrode electrically connected to the second connection point,
wherein the glue layer and the portion are overlapped with each other in a direction substantially parallel to the sidewall.
2. The light-emitting structure of claim 1 , further comprising a wavelength conversion layer, an encapsulation layer, or both thereof arranged on the semiconductor light-emitting element.
3. The light-emitting structure of claim 1 , wherein the semiconductor light-emitting element comprises a wavelength conversion layer being conformably shaped on the semiconductor light-emitting element.
4. The light-emitting structure of claim 1 , further comprising a lens arranged on the semiconductor light-emitting element, and a wavelength conversion layer formed between the lens and the semiconductor light-emitting element.
5. The light-emitting structure of claim 1 , wherein the first electrode and the second electrode are separated from each other by a groove.
6. The light-emitting structure of claim 5 , further comprising an insulating material filled in the groove.
7. The light-emitting structure of claim 1 , wherein the first electrode has an outer thickness and an inner thickness which is thinner than the outer thickness.
8. The light-emitting structure of claim 1 , further comprising a growth substrate for epitaxially growing the semiconductor light-emitting element, or a temporary substrate for supporting the semiconductor light-emitting element.
9. The light-emitting structure of claim 1 , wherein the semiconductor light-emitting element comprises a base.
10. The light-emitting structure of claim 1 , wherein the first electrode has a first side near the semiconductor light-emitting element, and a second side opposite to the first side, the portion locates at the first side.
11. The light-emitting structure of claim 1 , wherein the semiconductor light-emitting element is devoid of a growth substrate.
12. The light-emitting structure of claim 1 , wherein the first electrode comprises an edge far away from the semiconductor light-emitting element and not overlapping the semiconductor light-emitting element.
13. The light-emitting structure of claim 1 , wherein the first electrode comprises a first edge not overlapping the semiconductor light-emitting element, the second electrode comprises a second edge not overlapping the semiconductor light-emitting element, a distance between the first edge and the second edge is larger than a width of the semiconductor light-emitting element.
14. The light-emitting structure of claim 1 , further comprising a groove formed between the first electrode and the second electrode, wherein the first electrode has a portion higher than the groove.